Vertical Semiconductor Pillar Oxidation Target Layers
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Solution Overview
Problem
The complexity of vertically stacking cells in semiconductor devices increases process defects due to the height of thin films, making it challenging to achieve high integration levels.
Innovation Solution
A vertical type semiconductor device is designed with a pillar structure and word line structures that include a blocking dielectric layer and metal pattern, where the height of the word line structures is enlarged at the contact point with the pillar structure, and an insulating structure with a smaller height portion contacting the pillar and extending laterally, allowing for increased stacking without increasing cell height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the height of thin films is increased to stack more cells vertically, then the number of stacked cells increases, but process defects increase due to increased complexity
Solution Approach 1:
The device is divided into multiple identical cell units that are stacked vertically. Each cell contains segmented components (channel pattern, blocking dielectric layer, insulating layer, electrode patterns) that can be independently formed and then stacked. This segmentation allows for standardized replication of cell structures, increasing the number of stacked cells while maintaining consistent process quality across each segment.
Solution Approach 2:
The patent employs a nested structure where multiple cell units are stacked one inside another in the vertical direction. Each cell is self-contained with its own channel, blocking dielectric, insulating layer, and electrodes, and these cells are nested vertically to achieve high integration. The pillar structure serves as a common core around which multiple cells are nested, allowing dense vertical stacking without increasing lateral footprint.
2Productivity
If the number of vertically stacked cells is increased, then integration level improves, but process complexity increases leading to manufacturing difficulties
Solution Approach 1:
The manufacturing process is segmented into standardized steps that are repeated for each cell: forming channel patterns, depositing blocking dielectric layers, forming insulating layers, and creating electrode patterns. This segmentation of the manufacturing process into modular, repeatable steps simplifies the overall complexity despite increasing the number of stacked cells, as each segment follows the same procedure.
Solution Approach 2:
The patent transitions from planar (2D) device architecture to vertical (3D) stacking, utilizing the vertical dimension to increase integration level. By stacking cells in the vertical direction rather than expanding laterally, the device achieves higher integration without proportionally increasing process complexity, as the same fabrication steps are applied in the third dimension.
3Reliability
If the height of word line structures is enlarged at contact portions, then electrical connection reliability improves, but vertical space consumption increases
Solution Approach 1:
The word line structures have varying heights at different locations: they are enlarged at the contact portions with pillar structures to ensure reliable electrical connection, while being smaller at other portions to conserve vertical space. This local variation in geometry optimizes both connection reliability and space utilization, with the enlarged height applied only where electrically necessary.
Solution Approach 2:
The patent utilizes the vertical dimension strategically by varying the height of word line structures in the vertical direction based on functional requirements. The third dimension is used to provide enhanced contact area where needed while minimizing overall vertical footprint, allowing the device to accommodate taller structures only in specific locations rather than uniformly throughout.
4Length of stationary object
If insulating structures with smaller height portions are used, then vertical space is reduced enabling more stacking, but manufacturing precision requirements increase
Solution Approach 1:
The insulating structures are segmented into different height portions: a first insulating layer with a larger height and a second insulating layer with a smaller height. This segmentation allows each layer to be optimized for its specific function and formed using appropriate manufacturing processes, reducing the overall precision requirements compared to forming a single uniform structure with varying heights.
Solution Approach 2:
The insulating layers are formed in a predetermined sequence and configuration before subsequent manufacturing steps. The first insulating layer is formed to provide initial insulation and support, followed by the second insulating layer with reduced height to enable tighter stacking. This preliminary establishment of the insulating structure framework simplifies subsequent processing and reduces precision requirements for later steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables a higher number of stacked cells with reduced vertical height, decreasing process defects and enhancing integration levels in semiconductor devices.
Implementation Method 1
the surface of the oxidation target layer patterns may be oxidized to form an oxide to form first insulating layer structures including a first portion having a relatively smaller height and making contact with the pillar structure and the insulating interlayer horizontally extended in the side direction of the first portion
Data Source
AI summary
A vertical type semiconductor device can include a vertical pillar structure that includes a channel pattern with an outer wall. Horizontal insulating structures can be vertically spaced apart from one another along the vertical pillar structure to define first vertical gaps therebetween at first locations away from the outer wall and to define second vertical gaps therebetween at the outer wall, where the second vertical gaps are wider than the first vertical gaps. Horizontal wordline structures can be conformally located in the first and second vertical gaps between the vertically spaced apart horizontal insulating structures, so that the horizontal wordline structures can be vertically thinner across the first vertical gaps than across the second vertical gaps.