Vertical Plasma Electrode Layout for Uniform Multi-Substrate Processing

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Solution Overview

Problem

Existing substrate processing technologies face challenges in uniformly processing films on substrates, particularly in mass-produced devices with fine patterns, where temperature control is crucial to suppress impurity diffusion and use of low heat resistance materials like organic materials.

Innovation Solution

A substrate processing apparatus with a process chamber and plasma generator featuring a unique electrode configuration, where the first electrode extends from the lower side to the intermediate side, and the second electrode from the upper side, generating a capacitively coupled plasma to ensure uniform plasma distribution and film formation across multiple substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If plasma processing is used to process films at low temperature, then impurity diffusion is suppressed and low heat resistance materials can be used, but uniform processing of the film becomes difficult

Engineering Contradiction:
Improvesubstrate temperatureVSAvoidfilm processing uniformity
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The electrode is divided into multiple electrode parts arranged in the vertical direction, with each electrode part generating plasma in a specific region. This segmentation allows independent control of plasma generation in different vertical zones, enabling uniform plasma distribution and film processing across the entire substrate surface at low temperatures.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces vertical arrangement of electrode parts as a new dimension for plasma control. By arranging electrode parts in the vertical direction corresponding to different height positions of substrates, the system achieves three-dimensional plasma distribution control, ensuring uniform plasma exposure across all substrates stacked vertically.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If multiple substrates are processed simultaneously in a process chamber, then productivity is improved, but uniform plasma distribution and film quality across all substrates becomes difficult to maintain

Engineering Contradiction:
Improvesubstrate processing throughputVSAvoidfilm thickness uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

Multiple electrode parts are vertically arranged to correspond to different height positions of multiple substrates. Each electrode part generates plasma in its corresponding vertical region, ensuring that all substrates receive uniform plasma exposure simultaneously, thereby maintaining film quality consistency across multiple substrates while improving productivity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Each electrode part is designed to generate plasma with appropriate intensity for its specific vertical position and corresponding substrate. This local optimization of plasma generation ensures that each substrate receives the precise plasma dosage needed for uniform film formation, regardless of its position in the vertical stack.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables uniform film thickness and quality across substrates, improving processing efficiency and reducing plasma damage to apparatus components, while maintaining high substrate temperature control.

Implementation Method 1

a plasma generator configured to generate plasma in the process chamber, the plasma generator including a first electrode part configured to extend from a lower side to an intermediate side of the process chamber, and a second electrode part configured to extend from an upper side to the intermediate side of the process chamber

Methodology Applied
Scientific EffectCapacitively coupled plasma: Plasma

Data Source

PatentUS20240096604A1Substrate processing apparatus, plasma generation apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium
Publication Date: 2024.03.21 KOKUSAI DENKI KK
  • US20240096604A1 patent drawing
  • US20240096604A1 patent drawing
  • US20240096604A1 patent drawing

AI summary

There is provided a technique that includes: a process chamber configured to process a plurality of substrates; and a plasma generator configured to generate plasma in the process chamber, the plasma generator including a first electrode part configured to extend from a lower side to an intermediate side of the process chamber, and a second electrode part configured to extend from an upper side to the intermediate side of the process chamber.