Vertical Plasma Processing Apparatus ICP Electrode Design
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Solution Overview
Problem
Conventional plasma processing apparatuses of the capacitively coupled plasma type face issues with particle generation and electron density, particularly when attempting to increase electron density for improved process efficiency, which leads to increased particle generation and higher costs due to the need for higher RF power frequencies.
Innovation Solution
A vertical plasma processing apparatus utilizing an Inductively Coupled Plasma (ICP) electrode and RF power supply to generate plasma, reducing particle generation and increasing electron density without raising RF power or frequency, by using a plasma generation box with an ICP electrode and an RF power supply connected to it, and a gas activation mechanism to form a plasma generation area that communicates airtightly with the process field.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If higher RF power frequency is used to increase electron density, then process efficiency is improved, but particle generation increases and operational costs increase
Solution Approach 1:
The patent changes the plasma generation method from capacitively coupled plasma (CCP) to inductively coupled plasma (ICP), fundamentally altering the plasma generation parameters. This allows high electron density to be achieved through inductive coupling rather than high-frequency RF power, thereby maintaining process efficiency while reducing particle generation and operational costs
2Productivity
If higher RF power is used to increase electron density, then process efficiency is improved, but operational costs increase
Solution Approach 1:
The patent transitions from capacitively coupled plasma (CCP) to inductively coupled plasma (ICP), changing the fundamental parameters of plasma generation. This allows high electron density and process efficiency to be achieved through inductive coupling with lower RF power consumption, thereby reducing operational costs while maintaining productivity
3Quantity of substance
If capacitively coupled plasma is used, then plasma generation is achieved, but particle generation occurs and electron density is limited
Solution Approach 1:
The patent fundamentally changes the plasma generation mechanism from capacitively coupled plasma (CCP) to inductively coupled plasma (ICP). This parameter change enables high electron density to be achieved through inductive coupling, which generates plasma through electromagnetic induction rather than capacitive discharge, thereby reducing particle generation while increasing electron density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ICP electrode setup significantly decreases particle generation, enhances radical density, and improves plasma process efficiency by allowing higher power application while maintaining low particle generation, thus improving semiconductor device yield and reducing operational costs.
Implementation Method 1
an ICP (Inductively Coupled Plasma) electrode provided to the plasma generation box, and an RF (radio frequency) power supply connected to the electrode
Implementation Method 2
an activation mechanism configured to turn the process gas into plasma
Data Source
AI summary
A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.