Vertical Plug Isolation Layout for Memory Select Lines
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Solution Overview
Problem
Existing memory devices face challenges in forming isolation patterns to separate select lines without causing loss of vertical plugs, which can affect the functionality and efficiency of memory cells.
Innovation Solution
A memory device is designed with a first and second vertical plug arrangement, where a first select line contacts the first vertical plug, a second select line is on the same layer as the first, and an isolation pattern overlaps with portions of both plugs to separate them, while maintaining the integrity of the vertical plugs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an isolation pattern is formed to separate select lines, then select line separation is improved, but vertical plug integrity deteriorates
Solution Approach 1:
The isolation pattern is segmented to overlap only with specific portions of adjacent vertical plugs rather than completely separating them. This partial segmentation allows the isolation pattern to separate select lines electrically while preserving the structural integrity and functionality of the vertical plugs by leaving portions of them exposed.
Solution Approach 2:
The isolation pattern applies local quality by being positioned selectively at specific locations where select line separation is needed, while deliberately avoiding complete coverage of the vertical plugs. This localized approach ensures separation functionality is achieved without compromising the overall plug structure and electrical connectivity.
2Reliability
If vertical plugs are completely separated by isolation pattern, then select line isolation is improved, but leakage current prevention deteriorates
Solution Approach 1:
The isolation pattern performs partial action by covering only the necessary portions of vertical plugs for select line separation, rather than completely isolating the plugs. This partial coverage is sufficient to prevent leakage currents between adjacent select lines while maintaining adequate electrical connectivity within each plug structure.
Data Source
AI summary
The present discloses includes a memory device including a first vertical plug and a second vertical plug that are arranged to be adjacent to each other, a first select line contacting the first vertical plug, a second select line over a same layer as the first select line and contacting the second vertical plug, and an isolation pattern overlapping with a portion of the first vertical plug and a portion of the second vertical plug and separating the first select line from the second select line.