Vertical Polysilicon TFT Channel for High-Mobility Display Panels
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Solution Overview
Problem
Current thin film transistors used in chip manufacturing, particularly in display panels, face challenges in achieving high carrier mobility and small device size, which are essential for improving integration, operating frequency, and reducing costs.
Innovation Solution
The semiconductor device incorporates a thin film transistor with a polysilicon channel portion where the growth direction of crystal grains is aligned with the carrier movement direction, forming a single crystal-like channel structure. This design includes a vertical active structure layer with a first conductor portion, channel portion, and second conductor portion, optimized with specific dimensions and material properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If polysilicon is used in chip manufacturing, then device size is reduced, but carrier mobility is insufficient
Solution Approach 1:
The patent changes the crystal structure parameter of polysilicon from amorphous or granular to single-crystal orientation by controlling the growth direction of crystal grains during deposition. This parameter change enables polysilicon to achieve high carrier mobility comparable to single-crystal silicon while maintaining the thin-film fabrication advantages, thus resolving the contradiction between small device size and high carrier mobility.
2Productivity
If channel length is shortened to improve integration, then operating frequency increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent transitions from planar transistor architecture to vertical channel architecture, where the channel extends in the vertical dimension rather than horizontally. This dimensional change allows for shorter effective channel lengths to improve integration and operating frequency while the vertical growth provides natural alignment and easier fabrication control, reducing manufacturing precision requirements.
3Reliability
If thin film transistor performance is improved, then chip dependence is reduced, but device complexity increases
Solution Approach 1:
The patent merges the channel formation and gate electrode deposition processes into an integrated vertical structure. The vertical channel grows directly from the substrate with the gate electrode conformally coating the channel, eliminating the need for separate, complex alignment steps required in planar structures. This merging simplifies fabrication while achieving high-performance thin film transistors that reduce chip dependence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances carrier mobility by creating a single crystal-like channel structure, thereby improving the performance and reducing the cost of display panels and chips by increasing integration and reducing dependence on costly chip components.
Implementation Method 1
a growth direction of a crystal grain of the polysilicon is consistent with a moving direction of a carrier
Data Source
AI summary
A semiconductor device, a display panel, and a chip are provided in embodiments of the present application. The semiconductor device of the embodiments of the present application stacks a first conductor portion, a channel portion, and a second conductor portion to form a vertical active structure layer to realize a narrow channel. A growth direction of crystal grains arranged in the channel potion is consistent with a moving direction of carriers to provide a single crystal-like channel.