Vertical Semiconductor Radiation Detector Zones
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Solution Overview
Problem
Current semiconductor-based radiation detectors face limitations in maximizing the detection volume and efficiency due to the constraints in the design and doping of their semiconductor zones, which affect the generation and collection of charge carriers under ionizing radiation.
Innovation Solution
The method involves producing a semiconductor body with a first base zone and a second base zone, where the second base zone is doped complementarily and extends vertically, formed through epitaxial layers with specific doping concentrations and geometries, allowing for a larger detection volume and efficient charge carrier collection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a conventional semiconductor detector design with single base zone is used, then the device complexity is low, but the detection volume is limited
Solution Approach 1:
The semiconductor body is divided into multiple base zones (first base zone and second base zone) with complementary doping types arranged vertically. This segmentation allows each zone to contribute to charge carrier collection, thereby increasing the effective detection volume without proportionally increasing device complexity
Solution Approach 2:
The invention transitions from a conventional single-layer base zone design to a multi-layer vertical structure with alternating doping types. By adding the vertical dimension with multiple epitaxial layers of different conduction types, the detection volume is expanded while maintaining a compact detector geometry
2Measurement precision
If the base zone volume is increased to improve detection efficiency, then the sensitivity improves, but the manufacturing precision requirements increase
Solution Approach 1:
Different regions of the semiconductor body are assigned different doping types (n-type and p-type base zones alternating vertically) and doping concentrations. This local quality variation optimizes charge carrier generation and collection in each region, improving detection sensitivity while using standard epitaxial growth techniques that maintain manufacturing feasibility
Solution Approach 2:
The invention utilizes controlled changes in doping concentration and layer thickness during epitaxial growth to create the multi-zone structure. By adjusting these parameters during manufacturing, the detection sensitivity is optimized without requiring extreme manufacturing precision, as the epitaxial process naturally provides good layer control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables a radiation detector with a significantly increased detection volume and improved sensitivity by ensuring the entire volume of the first base zone is depleted under reverse bias, enhancing the detection of ionizing radiation.
Implementation Method 1
During operation of the radiation detector, the pn junction is reverse-biased by an electrical voltage being applied to the semiconductor zones by using connection electrodes. This results in an electric field within the semiconductor body.
Implementation Method 2
If ionizing radiation enters into the semiconductor body during the operation of the radiation detector, then charge carriers are generated which, owing to the electric field, generate a current pulse that can be measured between the connection electrodes.
Data Source
AI summary
A radiation detector and method. One embodiment provides a radiation detector including a semiconductor body with a first base zone of a first conduction type and with at least one second base zone arranged at least partly in the first base zone, extending in a vertical direction of the semiconductor body and doped complementarily to the first base zone. The method provides a semiconductor substrate. Several epitaxial layers are produced arranged one above another on the semiconductor substrate. The layers in each case include a basic doping of the first conduction type and together with the semiconductor substrate form the semiconductor body. Semiconductor zones of a second conduction type are produced.