Vertical Semiconductor Device Current Detection High-Resistance Electrode
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Solution Overview
Problem
Current power semiconductor modules require additional space and complex manufacturing processes to detect current, increasing costs due to the separate disposition of resistor elements.
Innovation Solution
A vertical-type semiconductor device that utilizes a high-resistance electrode in the outer peripheral portion to measure potential difference and detect current without adding a new resistor element, effectively using the low current density area without increasing element size or altering layouts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resistor element is disposed separately from a power semiconductor element to detect current, then current detection function is achieved, but the device area increases and manufacturing complexity increases
Solution Approach 1:
The invention merges the current detection function with the existing power semiconductor element by forming a high-resistance electrode directly on the semiconductor substrate. This eliminates the need for a separate resistor element, thereby achieving current detection without increasing device area or manufacturing complexity.
Solution Approach 2:
The power semiconductor element is given multiple functions: it serves both as the power switching element and as the basis for current detection through the integrated high-resistance electrode. This multi-functionality approach allows current detection without adding separate components.
2Reliability
If a resistor element is disposed separately from a power semiconductor element to detect current, then current detection function is achieved, but manufacturing process complexity increases
Solution Approach 1:
The invention merges the current detection function with the existing power semiconductor element by forming a high-resistance electrode directly on the semiconductor substrate. This eliminates the need for a separate resistor element, thereby achieving current detection without increasing device area or manufacturing complexity.
3Area of stationary object
If the outer peripheral portion is utilized for current detection, then no additional space is required, but the current density in this region must be sufficiently low
Solution Approach 1:
The invention applies local quality by utilizing the outer peripheral portion of the semiconductor substrate where current density is naturally low. The high-resistance electrode is specifically formed in this region to detect current without being affected by high current density, thereby maintaining both compact area and detection accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables current detection without the need for additional resistor elements, simplifying manufacturing and reducing costs by utilizing the existing semiconductor structure to measure current through potential differences across high-resistance electrodes.
Implementation Method 1
a second electrode formed in the second surface through a high-resistance electrode whose resistance is Rs; and a third electrode formed along at least a part of the outer periphery of the second surface, wherein a potential difference Vs between the second and third electrodes is measured with a current I flowing between the first and second electrodes, and the current I is detected from the resistance Rs and the potential difference Vs
Data Source
AI summary
A vertical-type semiconductor device for controlling a current flowing between electrodes opposed against each other across a semiconductor substrate, including: a semiconductor substrate having first and second surfaces opposed against each other; a first electrode formed in the first surface; a second electrode formed in the second surface through a high-resistance electrode whose resistance is Rs; and a third electrode formed along at least a part of the outer periphery of the second surface, wherein a potential difference Vs between the second and third electrodes is measured with a current I flowing between the first and second electrodes, and the current I is detected from the resistance Rs and the potential difference Vs.