Vertical Semiconductor Light Emitting Device with Insulating Layer Holes

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Solution Overview

Problem

The existing methods for manufacturing vertical-type semiconductor light emitting devices, such as the laser lift-off method, can damage the nitride semiconductor layer and are inefficient due to the need for a sapphire substrate removal, which affects the reliability and optical output of the devices.

Innovation Solution

A semiconductor light emitting device with a light emitting structure and vertical-type electrode interconnected through contact protrusions on an insulating substrate, where the insulating layer has holes for the protrusions, and a conductive supporting member under the second electrode, allowing for electrical connection without the need to remove the sapphire substrate, thus preventing damage to the nitride semiconductor layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the laser lift-off method is used to remove the sapphire substrate, then the vertical-type electrode structure can be achieved, but the nitride semiconductor layer is damaged and device reliability deteriorates

Engineering Contradiction:

Improvedevice reliabilityVSAvoidlaser beam penetration damage

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

An intermediate layer is introduced between the sapphire substrate and the light emitting structure. This intermediate layer absorbs the laser energy and prevents the laser beam from penetrating through to the nitride semiconductor layer, thereby protecting the device while still enabling the lift-off process to achieve the desired vertical electrode configuration

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The harmful laser beam penetration is converted into a beneficial effect by using the laser energy to selectively remove or modify the intermediate layer, which in turn protects the nitride semiconductor layer. The laser energy that would otherwise damage the device is instead used to create a protective effect through the intermediate layer

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Shape

If the sapphire substrate is removed by etching or mechanical polishing, then the vertical-type structure can be formed, but the nitride semiconductor layer is damaged

Engineering Contradiction:

Improvevertical-type structureVSAvoidnitride semiconductor layer integrity

Core Design Contradiction:

ShapeVSManufacturing precision

Solution Approach 1:

The intermediate layer serves as a sacrificial mediator that is removed by etching or mechanical polishing instead of the nitride semiconductor layer. This protects the light emitting structure from damage while still allowing the formation of the vertical-type electrode configuration

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The intermediate layer is designed as a temporary, disposable component that is removed during manufacturing. It serves its protective function during the lift-off process and is then discarded, enabling the formation of the vertical structure without permanently affecting the device

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

3Productivity

If a horizontal-type electrode structure is used, then the sapphire substrate can be utilized, but the chip size must be large and production efficiency is limited

Engineering Contradiction:

Improvechip production per waferVSAvoidelectrode arrangement structure

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The electrode arrangement is inverted from the conventional horizontal configuration to a vertical configuration. By placing electrodes on opposite sides of the light emitting structure in the vertical direction rather than parallel to the substrate surface, the chip size is reduced and production efficiency is improved

Inventive Principle:

Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the manufacturing process by preventing damage to the semiconductor light emitting device and improving optical output and light emitting efficiency without the need for sapphire substrate removal, thereby increasing the reliability and efficiency of the device.

Implementation Method 1

the sapphire substrate 10 is separated and removed from the light emitting structure by irradiating a laser beam on bottom of the sapphire substrate 10 using a laser lift off (LLO) method

Methodology Applied

Scientific EffectLaser lift-off: Laser Ablation

Data Source

PatentUS8659051B2Semiconductor light emitting device and method for manufacturing thereof

Publication Date: 2014.02.25 SUZHOU LEKIN SEMICON CO LTD

AI summary

Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure disposed under an insulating layer having a plurality of holes. A first electrode is disposed on the insulating layer and a second electrode disposed is disposed under the light emitting structure. A conductive supporting member is disposed under the second electrode. The plurality of contact protrusions are disposed in the holes of the insulating layer and include filler connected to the first conductive semiconductor layer and disposed in the plurality of holes. The conductive supporting member physically contacts with the second electrode and has a thickness thicker than that of the insulating layer. The first electrode is located at a higher position than an entire region of the insulating layer and the insulating layer is located at a higher position than an entire region of the light emitting structure.