Vertical Sidewall Pressure Sensor via DRIE Etching

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Solution Overview

Problem

Conventional silicon pressure sensors have large die sizes due to sloped frame sidewalls, limiting the number of sensors that can be fabricated on a wafer and increasing production costs, while also facing challenges in sensitivity variability and stress distribution.

Innovation Solution

The development of pressure sensors with substantially vertical frame sides orthogonal to the diaphragm, achieved through Deep Reactive Ion Etching (DRIE) or other MEMS micro-machining techniques, allowing for adjustable sensitivity using a limited number of masks and processing steps, and incorporating a cross-shaped backside opening with rounded corners to reduce stress and breakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional KOH etching is used to form the backside cavity, then the manufacturing process is simple, but the frame sidewalls have a 54.7 degree slope that increases die size

Engineering Contradiction:
Improveetching process simplicityVSAvoiddie size
Core Design Contradiction:
Ease of manufactureVSLength of stationary object

Solution Approach 1:

The patent changes the etching parameters by switching from isotropic KOH etching to anisotropic DRIE etching, which produces vertical sidewalls instead of sloped ones. This parameter change in the etching process directly reduces the die size by eliminating the lateral etch component that creates the 54.7 degree slopes.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent substitutes the chemical etching mechanism (KOH) with a plasma-based DRIE process that uses alternating chemical etching and physical polymer deposition. This substitution enables vertical sidewall formation through controlled anisotropic etching, resolving the contradiction between manufacturing simplicity and die size reduction.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If the backside opening width is increased to accommodate sloped sidewalls, then the etching process can be completed, but the die length increases significantly

Engineering Contradiction:
Improvecavity formationVSAvoiddie length
Core Design Contradiction:
Manufacturing precisionVSLength of moving object

Solution Approach 1:

The patent changes the geometric parameters of the etched cavity by using DRIE to create vertical sidewalls. This eliminates the need for additional lateral space that would otherwise be required to accommodate sloped sidewalls, thereby reducing die length while maintaining complete cavity formation.

Inventive Principle:
Principle #35Parameter changes

3Length of stationary object

If the number of masks and processing steps is increased to achieve vertical sidewalls, then the die size is reduced, but the manufacturing complexity increases

Engineering Contradiction:
Improvedie sizeVSAvoidnumber of masks and processing steps
Core Design Contradiction:
Length of stationary objectVSDevice complexity

Solution Approach 1:

The patent makes the DRIE process multi-functional by using it to simultaneously achieve vertical sidewalls, precise depth control, and high aspect ratio cavity formation. This single process replacement for multiple conventional steps reduces overall manufacturing complexity while achieving die size reduction.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces sensor die size, enabling the fabrication of a high-density array of sensors on a wafer, making the production cost-effective and allowing for variable sensitivity, while minimizing stress and breakage, thus suitable for applications in portable devices and tire pressure monitoring systems.

Implementation Method 1

These sides, the interior sidewall of a backside cavity, are formed using a Deep Reactive Ion Etch (DRIE) or other Micro-Electro-Mechanical System (MEMS) micro-machining technique.

Methodology Applied
Scientific EffectDeep Reactive Ion Etching:

Data Source

PatentUS7487681B1Pressure sensor adjustment using backside mask
Publication Date: 2009.02.10 MEASUREMENT SPECIALTIES INC
  • US7487681B1 patent drawing
  • US7487681B1 patent drawing
  • US7487681B1 patent drawing

AI summary

Methods and apparatus for an absolute or gauge pressure sensor having a backside cavity with a substantially vertical interior sidewall. The backside cavity is formed using a DRIE etch or other MEMS micro-machining technique. The backside cavity has an opening that is cross shaped, where the dimensions of the cross may be varied to adjust pressure sensor sensitivity. The cross may have one or more rounded corners to reduce peak stress, for example, the interior corners may be rounded. A sensing conductor may be routed over one or more corners including the interior corners to detect breakage.