Etching Method for Vertical Structure Corner Precision
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Solution Overview
Problem
Existing etching methods for forming vertical structures, such as dry etching, often result in tails at corner areas, leading to changes in structure dimensions and performance issues in electronic devices, including altered vibration frequencies and increased die size due to required additional space.
Innovation Solution
An etching method involving a mask with a compensation pattern indented from one side of the opening pattern is used during dry etching, forming a vertical structure with an indented corner to prevent tail formation, ensuring precise side wall dimensions and maintaining device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If dry etching is used to form vertical structure, then etching can be performed in vertical direction, but tail remains in corner area causing round corner formation and structure dimension changes
Solution Approach 1:
The mask pattern is designed in advance with a compensation feature (protrusion at corner) that anticipates and counteracts the tail formation issue during etching. This preliminary design modification ensures that the final etched structure achieves the desired sharp corner geometry without requiring post-processing.
Solution Approach 2:
The compensation pattern in the mask creates a geometric counter-action to the expected tail formation. By adding material at the corner in the mask design, the etching process naturally produces the correct sharp corner shape, effectively canceling out the harmful tail effect before it can degrade the structure.
2Manufacturing precision
If additional space is provided to prevent tail effect, then structure dimension accuracy is improved, but die size increases and die density decreases
Solution Approach 1:
The mask design applies a localized compensation feature only at the corner areas where tail formation occurs, rather than increasing spacing throughout the entire structure. This targeted approach maintains sharp corners and accurate dimensions only where needed, without unnecessarily increasing the overall die area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents tail formation at corner areas, maintaining the structural integrity and performance of electronic devices, reducing die size, and increasing die density in wafer manufacturing.
Implementation Method 1
forming the vertical structure on the substrate through the opening pattern of the mask by a dry etching process
Data Source
AI summary
An etching method for forming a vertical structure is provided. The etching method may include: positioning a mask on a substrate, wherein the mask includes an opening pattern and a compensation pattern, and the compensation pattern is disposed at a corner of two adjacent sides of the opening pattern and includes a concave compensation pattern that is indented from one of the two adjacent sides; and forming the vertical structure on the substrate through the opening pattern of the mask by a dry etching process.