Vertical Support Structure for Stable Capacitor Electrode Formation
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Solution Overview
Problem
The intermediate structure in semiconductor device manufacturing, particularly during the formation of capacitor structures, is prone to collapsing when sacrificial layers are removed, leading to a lower manufacturing yield due to the lack of structural support.
Innovation Solution
Incorporating a vertical supporting structure that connects horizontal supporting layers to provide additional rigidity and prevent collapse, enhancing the overall structure of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sacrificial layers are removed to define spaces between capacitor electrodes, then capacitor structure formation is enabled, but the intermediate structure becomes prone to collapsing
Solution Approach 1:
The patent applies preliminary action by forming supporting pillars before removing the sacrificial layers. These pillars are created in advance to provide structural support during the subsequent sacrificial layer removal process, preventing framework collapse while enabling precise capacitor electrode spacing definition.
Solution Approach 2:
The patent uses supporting pillars as intermediary structures that temporarily maintain framework integrity during the manufacturing process. These pillars act as mediators between the horizontal supporting layers, providing the necessary mechanical support while allowing the sacrificial layers to be removed for capacitor electrode formation.
2Reliability
If vertical supporting structures are added to prevent framework collapse, then manufacturing yield is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the supporting function into discrete vertical pillars rather than using a continuous complex support structure. These segmented pillars are strategically placed at specific locations to provide necessary support, simplifying the overall structure while maintaining manufacturing yield through targeted reinforcement of the framework.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a lower horizontal supporting layer, an upper horizontal supporting layer, a vertical supporting structure, and a first capacitor electrode. The lower horizontal supporting layer is disposed on the substrate. The upper horizontal supporting layer is disposed on the lower horizontal supporting layer. The vertical supporting structure extends between the lower horizontal supporting layer and the upper horizontal supporting layer. The first capacitor electrode is disposed on the substrate and extends from the lower horizontal supporting layer to the upper horizontal supporting layer.