Vertical Thin Film Transistor Pressure Sensor with Air Gaps
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Solution Overview
Problem
Current pressure sensors face challenges in achieving high sensitivity and flexibility while maintaining a small size, particularly in applications such as intelligent bionic robots and wearable devices, where they need to detect subtle pressure changes effectively.
Innovation Solution
The pressure sensing unit incorporates vertical and lateral thin film transistors with air gaps formed by insulating supports, allowing for increased sensitivity by changing gate capacitance and channel current in response to pressure, and includes a configuration of pressure sensing subunits and substrates that enhance detection range and sensitivity without increasing fabrication complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional pressure sensor structures are used, then the device can detect pressure changes, but the sensitivity is insufficient for detecting subtle pressure changes
Solution Approach 1:
The pressure sensor is divided into multiple pressure sensing subunits, each comprising vertical and lateral thin film transistors. This segmentation allows each subunit to independently contribute to the overall detection capability, enhancing the sensor's ability to detect subtle pressure changes through cumulative signal amplification.
Solution Approach 2:
The invention introduces both vertical and lateral thin film transistors, adding a lateral dimension to the traditional vertical structure. This dimensional expansion creates multiple current pathways and increases the effective sensing area, thereby improving sensitivity without proportionally increasing the device footprint.
2Area of stationary object
If the pressure sensing unit is made smaller, then it is suitable for wearable devices, but the detection range is reduced
Solution Approach 1:
The insulating supports are strategically positioned at specific locations within the thin film transistors to create localized air gaps. This local modification optimizes the electric field distribution and capacitance characteristics in critical regions, enhancing sensitivity without requiring a proportional increase in overall device area.
Solution Approach 2:
The pressure sensing subunits are arranged in a compact configuration where lateral thin film transistors are positioned between vertical thin film transistors. This nested arrangement maximizes the use of available space, allowing multiple sensing elements to coexist in a small footprint while maintaining comprehensive detection coverage.
3Measurement precision
If air gaps are formed using insulating supports, then sensitivity increases, but fabrication complexity increases
Solution Approach 1:
The insulating supports serve dual functions: they provide mechanical support for the gate electrode and simultaneously create the necessary air gaps for enhanced capacitance sensitivity. This merging of structural and functional elements eliminates the need for separate air gap formation processes, simplifying fabrication while maintaining high sensitivity.
Solution Approach 2:
The insulating supports automatically define the air gap dimensions through their physical presence and positioning, eliminating the need for additional steps to precisely control gap size. The structure self-regulates the critical dimensional parameters during fabrication, reducing process complexity and improving repeatability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in a pressure sensing unit with higher sensitivity and a broader detection range, capable of generating large current fluctuations for subtle pressure changes, while also being flexible and suitable for integration into wearable devices.
Implementation Method 1
A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor
Implementation Method 2
capable of generating large current fluctuations for subtle pressure changes
Data Source
AI summary
A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.