Vertical TFT Sensor Structure for Miniature Target Detection

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Solution Overview

Problem

Conventional semiconductor diagnostic devices are expensive due to their silicon-on-insulator (SOI) structure and suffer from sub-optimal efficiency in capturing miniature targets, leading to degraded accuracy in detection.

Innovation Solution

A novel semiconductor device with thin-film-transistors (TFTs) formed on a bulk semiconductor wafer, which reduces fabrication costs and enhances signal-to-noise ratio by efficiently capturing miniature targets through a unique structural design and fabrication process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional SOI structure is used, then device performance is maintained, but fabrication cost increases

Engineering Contradiction:

Improvefabrication costVSAvoiddevice performance

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent replaces expensive silicon-on-insulator substrates with cheaper bulk semiconductor substrates that can be processed and discarded more economically, achieving cost reduction while maintaining functional performance through alternative device structures

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent changes the substrate parameter from SOI to bulk semiconductor, and modifies device structure parameters (adding guard rings, adjusting well depths) to compensate for the substrate change, thereby maintaining performance while reducing cost

Inventive Principle:

Principle #35Parameter changes

2Measurement precision

If conventional SOI-based devices are used, then manufacturing is simplified, but detection accuracy degrades due to sub-optimal efficiency in capturing miniature targets

Engineering Contradiction:

Improvedetection accuracyVSAvoidefficiency in capturing miniature targets

Core Design Contradiction:

Measurement precisionVSProductivity

Solution Approach 1:

The patent implements preliminary concentration of miniature targets in the detection region before actual detection occurs, using fluid flow control and electrostatic field pre-positioning to gather targets in advance, thereby improving both capture efficiency and detection accuracy

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent introduces intermediary structures such as guard rings and intermediate fluid channels that facilitate the efficient transfer and concentration of miniature targets from the bulk fluid to the detection region, improving capture efficiency without compromising measurement precision

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS20240038894A1Thin-Film Transistors For Detecting Miniature Targets

Publication Date: 2024.02.01 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

An interconnect structure is disposed over a semiconductor substrate. The interconnect structure includes a plurality of interconnect layers. A first thin-film transistor (TFT) and a second TFT disposed over the semiconductor substrate. The first TFT and the second TFT each vertically extend through at least a subset of the interconnect layers. An opening is formed in the interconnect structure. The opening is disposed between the first TFT and the second TFT. A sensing film is disposed over a bottom surface and side surfaces of the opening.