Vertical Topology Light Emitting Device for Uniform Current Injection

The patent transitions from horizontal topology to vertical topology, changing the spatial arrangement dimension of the semiconductor layers. This dimensional change allows the light emitting layer to be positioned vertically between n-type and p-type semiconductor layers, enabling uniform current injection from the bottom substrate while maintaining large light emission area at the top surface, thereby resolving the contradiction between manufacturing simplicity and emission uniformity.

The patent inverts the conventional horizontal structure by stacking layers vertically with the n-type semiconductor layer at the bottom, light emitting layer in the middle, and p-type semiconductor layer at the top. This inversion allows current to be injected uniformly from the large-area bottom electrode through the vertical structure, solving the non-uniform current injection problem while maintaining manufacturing feasibility through standard vertical epitaxial growth processes.

The patent extracts and removes the heterogeneous substrate from the final device structure. The vertical topology is grown epitaxially on a temporary substrate, then the substrate is removed and replaced with a transparent electrode and encapsulation structure. This extraction eliminates the thermal conductivity limitations of heterogeneous substrates while maintaining ease of manufacture through standard vertical growth processes followed by substrate release techniques.

The patent introduces a transparent electrode as an intermediary between the removed substrate and the vertical semiconductor structure. This intermediary maintains the electrical and mechanical connection while allowing optical transmission, enabling the device to function without the thermal limitations of the original heterogeneous substrate while preserving manufacturing simplicity.