Vertically Oriented Transformer Shielding Structure
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Solution Overview
Problem
Conventional electronic components on semiconductor ICs face issues such as excess space consumption, poor device performance, inadequate shielding, and high fabrication costs, particularly due to excess eddy current losses and inefficient use of chip area in transformers and inductors with lateral coil windings.
Innovation Solution
The development of vertically-oriented transformers and inductors with variable metal width coils, where the magnetic field is parallel to the substrate surface, reducing eddy current losses and enabling more efficient use of chip area, along with a shielding structure to minimize noise and interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If lateral coil windings are used in transformers and inductors, then the magnetic field is perpendicular to the substrate surface, but this causes excess eddy current losses and poor device performance
Solution Approach 1:
The patent inverts the conventional lateral coil winding approach by implementing vertically-oriented coils where the magnetic field is parallel to the substrate surface rather than perpendicular. This inversion fundamentally changes the magnetic field orientation to eliminate eddy current losses in the substrate while maintaining transformer and inductor functionality.
Solution Approach 2:
The patent transitions from two-dimensional lateral coil windings to three-dimensional vertically-oriented coils. By adding the vertical dimension to the coil structure, the magnetic field orientation changes from perpendicular to parallel with the substrate, enabling reduced eddy current losses while maintaining functional performance.
2Area of stationary object
If conventional electronic components are formed on ICs, then they can be integrated, but this results in excess space consumption and inefficient use of chip area
Solution Approach 1:
The patent utilizes the vertical dimension for coil windings, allowing the magnetic field to be generated parallel to the substrate surface. This three-dimensional approach enables more compact component layouts and improves the efficiency of chip area utilization, thereby increasing functional density without sacrificing performance.
3Object-affected harmful factors
If conventional shielding structures are used, then noise and interference can be reduced, but this increases device complexity and fabrication costs
Solution Approach 1:
The patent extracts and addresses the source of electromagnetic interference by orienting the magnetic field parallel to the substrate surface. This fundamental change in magnetic field orientation inherently reduces coupling with adjacent circuits and minimizes the need for complex shielding structures, thereby reducing both device complexity and fabrication costs while maintaining noise reduction benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces chip area consumption, minimizes substrate losses, enhances impedance transformation ratios, and improves coupling factors, making it suitable for high-frequency applications while lowering thermal noise and fabrication costs.
Implementation Method 1
The first and second coils have respective winding orientations that are non-parallel to the surface of the substrate. In one embodiment, the winding orientations of the first and second coils are defined at least in part by an axis that is perpendicular to the surface of the substrate.
Implementation Method 2
conventional electronic components formed on an IC may face shortcomings such as excess space consumption, poor device performance, inadequate shielding, and high fabrication costs
Data Source
AI summary
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate that spans in an X-direction and a Y-direction that is orthogonal to the X-direction. The semiconductor device includes an interconnect structure formed over the substrate in a Z-direction that is orthogonal to both the X-direction and the Y-direction. The interconnect structure includes a plurality of metal lines interconnected together in the Z-direction by a plurality of vias. The interconnect structure contains a transformer device that includes a primary coil and a secondary coil. The primary coil and the secondary coil are each wound at least partially in the Z-direction.