Vertical Transistor Channel Holes for High Integration
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Solution Overview
Problem
Current semiconductor devices face limitations in increasing the degree of integration of semiconductor elements, particularly in vertical transistor structures, which hinders the efficient processing of large data volumes with a small number of devices.
Innovation Solution
A semiconductor device design featuring vertically stacked gate electrodes with channel holes that include first and second conductivity-type impurity channel pads, interconnected by distinct interconnection lines, and a hole connecting portion to enhance electrical signal transmission and data processing capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If vertical transistor structure is adopted to increase degree of integration, then device capacity increases, but device complexity increases
Solution Approach 1:
The channel pads are divided into first and second channel pads with different conductivity types, and interconnection lines are segmented to connect to different channel pads. This segmentation allows independent control of different channel regions, enabling complex functionality while maintaining manageable device structure through modular organization.
Solution Approach 2:
The patent transitions from planar interconnection to three-dimensional vertical stacking, with gate electrodes stacked vertically and channel holes penetrating through the stack. This dimensional change increases integration density by utilizing vertical space, allowing multiple functional layers to coexist without proportionally increasing planar footprint.
2Productivity
If multiple interconnection lines with different electrical signals are introduced, then data processing capability improves, but device complexity increases
Solution Approach 1:
The vertical transistor structure with stacked gate electrodes and penetrating channel holes serves multiple functions: it provides vertical current conduction paths, enables multi-signal interconnection, and supports both first and second conductivity type channel pads. This multi-functional design increases data processing capability without requiring separate dedicated structures for each function.
Solution Approach 2:
The channel holes act as intermediaries that penetrate through the gate stack, providing direct vertical connection paths between different interconnection lines and channel pads. This intermediary structure simplifies the interconnection architecture by eliminating the need for complex lateral routing through the substrate, thereby improving signal transmission efficiency.
3Reliability
If channel pads with different conductivity types are disposed at channel hole ends, then electrical signal transmission improves, but manufacturing precision requirements increase
Solution Approach 1:
The first and second channel pads with different conductivity types are formed at the channel hole ends before final interconnection line formation. This preliminary action ensures proper electrical contact and signal transmission pathways are established early in the manufacturing process, facilitating subsequent fabrication steps while maintaining reliable electrical characteristics.
Data Source
AI summary
A semiconductor device includes a gate stack including gate electrodes stacked vertically on a substrate. Channel holes penetrate through the gate stack to extend vertically to the substrate. Each of the channel holes includes a channel region. First channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the first channel pads includes at least one first conductivity-type impurity. Second channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the second channel pads includes at least one second conductivity-type impurity.