Vertical Transistor Gate Contact for Thermal Management
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Solution Overview
Problem
Vertical transistor components face challenges in heat dissipation due to high thermal resistance between active regions and the cooling element, as the cooling element on the second surface would short-circuit the gate and source electrodes if placed on the first surface.
Innovation Solution
A vertical transistor component design with a gate contact electrode extending through the semiconductor body from the first surface to the second surface, allowing for improved heat dissipation by positioning the cooling element on the first surface while maintaining electrical insulation between the gate and source electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the cooling element is arranged on the second surface of the semiconductor body, then the electrical insulation between gate and source is maintained, but the thermal resistance is relatively high due to the distance from the active regions
Solution Approach 1:
The gate contact electrode extends through the semiconductor body in the vertical dimension, allowing the cooling element to be positioned on the first surface (changing the spatial dimension of heat dissipation) while maintaining electrical insulation through the insulating layer that surrounds the electrode throughout its path through the semiconductor body
2Temperature
If the cooling element is arranged on the first surface to reduce thermal resistance, then heat dissipation is improved, but the gate and source electrode would short-circuit
Solution Approach 1:
An insulating layer acts as an intermediary between the gate contact electrode and the semiconductor body regions containing the source and gate electrodes. This insulating layer allows the cooling element to contact the first surface while preventing electrical short-circuiting between different electrical terminals
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces thermal resistance and enhances heat dissipation from the semiconductor component by allowing the cooling element to be placed on the first surface without short-circuiting the gate and source electrodes, thereby improving the component's thermal management.
Implementation Method 1
a gate dielectric is arranged between the gate electrode and the at least one body region
Implementation Method 2
the carrier can serve as a drain terminal of the transistor component and can further serve as a cooling element for dissipating heat generated in the semiconductor body
Data Source
AI summary
A vertical transistor component includes a semiconductor body with first and second surfaces, a drift region, and a source region and body region arranged between the drift region and the first surface. The body region is also arranged between the source region and the drift region. The vertical transistor component further includes a gate electrode arranged adjacent to the body zone, a gate dielectric arranged between the gate electrode and the body region, and a drain region arranged between the drift region and the second surface. A source electrode electrically contacts the source region, is electrically insulated from the gate electrode and arranged on the first surface. A drain electrode electrically contacts the drain region and is arranged on the second surface. A gate contact electrode is electrically insulated from the semiconductor body, extends in the semiconductor body to the second surface, and is electrically connected with the gate electrode.