Vertical Transistor Guide Region Bent Shape
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge is to increase the degree of integration of semiconductor devices to process large amounts of data efficiently, as existing planar transistor structures are inadequate for this purpose.
Innovation Solution
A semiconductor device with a vertical transistor structure is proposed, featuring gate stacks with channel regions and guide regions that penetrate through the gate stacks, where the guide regions have a bent portion towards the separation region, enhancing the integration and reliability of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a planar transistor structure is used, then the device structure is simple and easy to manufacture, but the degree of integration is insufficient for processing large amounts of data
Solution Approach 1:
The patent transitions from a planar (2D) transistor structure to a vertical (3D) transistor structure by extending the channel region vertically through the gate stack. This dimensional change allows for increased integration density while maintaining manufacturability, as the vertical channel enables more memory cells to be packed in the same footprint area without significantly increasing process complexity
2Productivity
If the degree of integration is increased to process large amounts of data, then data processing capability improves, but device reliability may deteriorate
Solution Approach 1:
The patent divides the vertical channel region into multiple segments by introducing guide regions that penetrate through the gate stack and separate the channel regions. This segmentation isolates individual memory cell operations, preventing interference between adjacent cells and maintaining device reliability even as integration density increases. The guide regions act as electrical isolators that segment the continuous vertical channel into discrete functional units
3Productivity
If channel regions are densely packed to increase integration density, then productivity improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent introduces guide regions as intermediary structures that facilitate the formation and positioning of channel regions. These guide regions serve as templates or markers during the manufacturing process, enabling precise placement of channel regions at high density. The guide regions are formed first and provide reference structures that simplify subsequent alignment steps, thereby maintaining manufacturing precision even as integration density increases
Data Source
AI summary
A semiconductor device includes gate stacks disposed on a substrate and spaced apart from each other in a first direction, with a separation region interposed between the gate stacks; channel regions penetrating through the gate stacks and disposed within each of the gate stacks; and a guide region adjacent to the separation region, penetrating through at least a portion of the gate stack, and having a bent portion that is bent toward the separation region.