Vertical Transistor Silicon Dioxide via Microwave Annealing

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Solution Overview

Problem

The high-temperature processing required for traditional spin-on-dielectric methods can damage existing structures in integrated circuit fabrication, necessitating a method that forms insulative silicon dioxide without excessive heating.

Innovation Solution

Microwave annealing of spin-on-dielectric materials to form insulative silicon dioxide with specific elemental concentrations of H and N, allowing for the creation of integrated circuitry components like vertical transistors without high-temperature processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional high-temperature furnace annealing is used to form insulative silicon dioxide, then the desired composition and density of silicon dioxide are achieved, but existing structures in the integrated circuit are damaged

Engineering Contradiction:

Improvecomposition and density of silicon dioxideVSAvoiddamage to existing structures

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent changes the processing parameters by using microwave annealing instead of high-temperature furnace annealing. This alternative heating method achieves the desired silicon dioxide composition and density (with H concentration of 0.002-0.5 atomic percent and N concentration of 0.005-0.3 atomic percent) while maintaining lower peak temperatures that prevent damage to existing circuit structures

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the thermal field-based furnace annealing system with a microwave electromagnetic field-based annealing system. This substitution allows for more controlled and localized heating that achieves the required material properties without the excessive thermal damage associated with traditional high-temperature processing

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Ease of manufacture

If spin-on-dielectric method is used to form insulative material, then the process is simplified and can be performed at lower temperatures, but the desired silicon dioxide composition and density are not achieved without high-temperature annealing

Engineering Contradiction:

Improveprocess simplicity and lower temperature operationVSAvoidcomposition and density of silicon dioxide

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent modifies the processing parameters of spin-on-dielectric by introducing microwave annealing as the heating mechanism. This enables the formation of silicon dioxide with precise composition (specific H and N concentration ranges) and density while maintaining the process simplicity and relatively low temperature operation characteristics of spin-on-dielectric methodology

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the formation of integrated circuitry components with reduced risk of damaging existing structures, achieving desired composition and density without the need for high-temperature furnace annealing.

Implementation Method 1

The spin-on-dielectric is microwave annealed to form insulative silicon dioxide having a substantially planar top that is adjacent the substantially planar top of the bottom material

Methodology Applied

Scientific EffectMicrowave annealing: Dielectric Heating

Data Source

PatentUS12057493B2Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry

Publication Date: 2024.08.06 MICRON TECHNOLOGY INC

AI summary

Integrated circuitry comprises an electronic component. Insulative silicon dioxide is adjacent the electronic component. The insulative silicon dioxide has at least one of (a) and (b), where: (a): an average concentration of elemental-form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental-form N of 0.005 to 0.3 atomic percent. Other embodiments, including method, are disclosed.