Vertical Transistor Silicon Dioxide Formation Without High-Temperature Damage
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Solution Overview
Problem
The high-temperature processing required for traditional spin-on-dielectric methods can damage existing structures in integrated circuit fabrication, limiting their use in forming insulative silicon dioxide for vertical transistors and integrated circuitry.
Innovation Solution
Microwave annealing of spin-on-dielectric materials to form insulative silicon dioxide with specific elemental concentrations of H and N, reducing the need for high-temperature processing and minimizing damage to existing components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional high-temperature spin-on-dielectric processing is used, then insulative silicon dioxide can be formed, but existing structures on the wafer are damaged
Solution Approach 1:
The patent changes the processing temperature parameter from traditional high-temperature (900-1100°C) to low-temperature (600-800°C) processing. This parameter change allows the spin-on-dielectric process to form insulative silicon dioxide while avoiding damage to previously fabricated structures on the wafer, thus resolving the technical contradiction between achieving proper oxide formation and preventing structural damage
Solution Approach 2:
The patent uses a composite material approach by incorporating nitrogen and hydrogen elements into the silicon dioxide matrix, creating a modified silicon oxynitride material. This composite material achieves the desired insulative properties and density at lower processing temperatures, enabling formation without damaging existing structures while maintaining electrical performance
2Object-affected harmful factors
If low-temperature processing is used, then existing structures are protected, but insulative silicon dioxide with desired composition and density cannot be formed
Solution Approach 1:
The patent introduces nitrogen and hydrogen as intermediary elements that facilitate the formation of insulative silicon dioxide at low temperatures. These intermediaries modify the chemical composition to create silicon oxynitride, which has different formation characteristics than pure silicon dioxide, enabling proper material formation at temperatures that protect existing structures
Solution Approach 2:
The patent modifies the compositional parameters by controlling the concentrations of nitrogen (0.005-0.3 atomic percent) and hydrogen (0.002-0.5 atomic percent) in the silicon dioxide matrix. These parameter changes enable the material to achieve desired insulative properties and density at low processing temperatures, resolving the contradiction between temperature protection and material quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of insulative silicon dioxide with desired composition and density without high-temperature processing, reducing the risk of damaging pre-fabricated structures and allowing for the fabrication of integrated circuitry with improved reliability.
Implementation Method 1
The spin-on-dielectric is microwave annealed
Implementation Method 2
The spin-on-dielectric is microwave annealed to form insulative silicon dioxide
Data Source
AI summary
Integrated circuitry comprises an electronic component. Insulative silicon dioxide is adjacent the electronic component. The insulative silicon dioxide has at least one of (a) and (b), where: (a): an average concentration of elemental-form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental-form N of 0.005 to 0.3 atomic percent. Other embodiments, including method, are disclosed.