Vertical UV Semiconductor Device with Optimized AlGaN Doping
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Solution Overview
Problem
The challenge lies in manufacturing vertical ultraviolet light-emitting elements with improved ohmic characteristics and light output, as existing GaN thin-film technologies face difficulties in maintaining high light intensity due to ohmic characteristics.
Innovation Solution
A semiconductor device structure is designed with specific doping concentrations and layer configurations, including a first and second conductive semiconductor layer, an active layer, and a third conductive semiconductor layer with a controlled aluminum composition ratio, to enhance ohmic characteristics and light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If GaN thin-film is used for vertical ultraviolet light-emitting elements, then manufacturing is enabled, but ohmic characteristics deteriorate and light output intensity decreases
Solution Approach 1:
The patent applies local quality by creating a multi-layer semiconductor structure where different layers have different compositions and properties. Specifically, it uses an AlGaN layer with aluminum composition ratio of 0.05-0.30 adjacent to the active layer to improve hole injection, while other layers have different compositions optimized for their specific functions. This localized optimization resolves the contradiction by improving ohmic characteristics in critical regions without compromising the overall manufacturability of the vertical structure.
Solution Approach 2:
The patent employs composite materials by combining multiple semiconductor layers with different compositions (AlGaN, InGaN, GaN) to create a heterostructure. The AlGaN layer with specific aluminum composition (0.05-0.30) is复合 with InGaN quantum wells and GaN barrier layers to form a composite active layer structure. This composite approach enables simultaneous achievement of good ohmic characteristics and high light output by leveraging the complementary properties of different materials.
2Ease of manufacture
If GaN thin-film is used for vertical ultraviolet light-emitting elements, then manufacturing is enabled, but light output intensity decreases
Solution Approach 1:
The patent applies local quality by creating a multi-layer semiconductor structure where different layers have different compositions and properties. Specifically, it uses an AlGaN layer with aluminum composition ratio of 0.05-0.30 adjacent to the active layer to improve hole injection, while other layers have different compositions optimized for their specific functions. This localized optimization resolves the contradiction by improving ohmic characteristics in critical regions without compromising the overall manufacturability of the vertical structure.
Solution Approach 2:
The patent employs composite materials by combining multiple semiconductor layers with different compositions (AlGaN, InGaN, GaN) to create a heterostructure. The AlGaN layer with specific aluminum composition (0.05-0.30) is复合 with InGaN quantum wells and GaN barrier layers to form a composite active layer structure. This composite approach enables simultaneous achievement of good ohmic characteristics and high light output by leveraging the complementary properties of different materials.
3Reliability
If aluminum composition ratio in third conductive semiconductor layer is increased, then ohmic characteristics improve, but light absorption increases reducing light output
Solution Approach 1:
The patent applies parameter changes by precisely controlling the aluminum composition ratio in the third conductive semiconductor layer to be 0.05-0.30, which is lower than conventional designs. This parameter optimization balances two competing requirements: maintaining sufficient ohmic characteristics for good electrical contact while minimizing light absorption that would reduce light output intensity. The specific composition range represents an optimized parameter that simultaneously satisfies both electrical and optical performance requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves ohmic characteristics, reduces operating voltage, and enhances light output by suppressing light absorption, thereby addressing the limitations of existing GaN thin-film technologies.
Implementation Method 1
the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant
Implementation Method 2
light absorption can be suppressed in a semiconductor device to improve light output
Data Source
AI summary
Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges from 0.01:1.0 to 0.8:1.0.