Vertically Aligned 2D Material Transistors for Miniaturization
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Solution Overview
Problem
Current semiconductor devices, such as transistors, face limitations in reducing size and increasing speed due to the flat structure of metal oxide semiconductor field effect transistors (MOSFETs), prompting the need for three-dimensional structures like fin field effect transistors (FinFETs), and there is a requirement for high-efficiency gas sensors with enhanced reactivity and reusability.
Innovation Solution
A two-dimensional (2D) material with a semiconductor having a 2D crystal structure is vertically aligned on a substrate, incorporating a transition metal dichalcogenide, with a gate insulation layer and gate electrode on the upper and side surfaces, and a method involving a guide pattern layer and chemical vapor deposition to form the 2D material, allowing for reduced contact resistance and high electron mobility, and a gas sensor design that can adsorb and release gases efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a flat structure MOSFET is used, then the device structure is simple, but the device size cannot be reduced further and drive speed is limited
Solution Approach 1:
The patent transitions from a two-dimensional flat MOSFET structure to a three-dimensional vertically aligned structure. The 2D material stands perpendicular to the substrate, creating a vertical channel that enables further miniaturization while maintaining effective channel length and improving drive speed through enhanced electric field control.
2Reliability
If the contact area between electrodes and 2D material is increased, then connection stability is improved, but contact resistance increases
Solution Approach 1:
The patent utilizes the vertical orientation of the 2D material to enable electrode contact at the tip end rather than along the side surface. This vertical contact geometry minimizes the contact area between electrode and 2D material, thereby reducing contact resistance while maintaining reliable electrical connection through direct tip contact.
3Length of moving object
If the thickness of 2D material is reduced to several nanometers or less, then device size is reduced, but electron mobility typically decreases
Solution Approach 1:
The patent employs transition metal dichalcogenide materials which maintain high electron mobility even when thickness is reduced to several nanometers or less. The specific material selection and vertical alignment configuration preserve the electronic properties necessary for high-speed operation while achieving the required miniaturization.
4Reliability
If a vertically aligned 2D material structure is used, then contact resistance is reduced and electron mobility is maintained, but manufacturing complexity increases
Solution Approach 1:
The patent uses a guide pattern layer formed before the 2D material growth to pre-establish the vertical alignment configuration. This preliminary structuring guides the subsequent chemical vapor deposition process to grow the 2D material in the desired vertical orientation, simplifying the overall manufacturing process despite the complex final structure.
Solution Approach 2:
The guide pattern layer acts as an intermediary structure that facilitates the formation of vertically aligned 2D material. This intermediate layer enables controlled vertical growth during chemical vapor deposition and can be removed after the 2D material is formed, making the complex vertical alignment process more manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of transistors with fine sizes and high performance, such as FinFETs with channel widths of 10 nm or less, and gas sensors with high efficiency and reusability, maintaining high electron mobility and surface reactivity.
Implementation Method 1
at least one two-dimensional material capable of adsorbing a desired gas
Implementation Method 2
The heater may be configured to remove the desired gas from being adsorbed onto the two-dimensional material by heating the at least one two-dimensional material
Implementation Method 3
growing the two-dimensional material on the substrate from a portion of the transition metal layer that is exposed through the trench
Data Source
Figure 1
Figure 2~3
Figure 4A~4B
AI summary
A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.