VFET Power Line Layering for Flexible 3D Routing Access

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Solution Overview

Problem

Conventional semiconductor techniques face challenges in increasing the flexibility of routing, power input, and pin access for vertical field effect transistors (VFETs) to enhance device density and performance.

Innovation Solution

The semiconductor structure includes a first layer with first power lines, a second layer with VFETs, and a third layer with second power lines, where the second layer is disposed between the first and third layers, allowing VFETs to connect to either the first or second power lines. This configuration enhances routing flexibility and power input accessibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If VFETs use a top-to-bottom drain/source structure, then device density and performance are improved, but routing flexibility and pin access are limited

Engineering Contradiction:
Improvedevice densityVSAvoidrouting flexibility
Core Design Contradiction:
ProductivityVSAdaptability or versatility

Solution Approach 1:

The patent transitions from conventional planar FET routing to three-dimensional VFET architecture, where power lines are positioned above and below the VFET layer. This dimensional change enables power input from multiple directions (top and bottom), significantly improving routing flexibility while maintaining the vertical channel structure needed for high device density

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The power delivery network is segmented into multiple independent power lines positioned in different layers (above and below the VFET layer). This segmentation allows different portions of the VFET array to be powered from different directions, enabling flexible routing configurations and improving adaptability for various pin access requirements

Inventive Principle:
Principle #1Segmentation

2Device complexity

If conventional planar FET routing is used, then routing is simple, but device density and performance are limited

Engineering Contradiction:
Improverouting simplicityVSAvoiddevice density
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent moves from two-dimensional planar routing to three-dimensional power delivery, with power lines positioned in multiple layers above and below the VFET layer. This dimensional expansion enables higher device density through vertical stacking while maintaining manageable routing complexity through systematic layer organization

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The multi-layer power line structure serves multiple functions: it provides power delivery, enables flexible routing configurations, and supports various pin access patterns. This universal structure can accommodate different device layouts and routing requirements without fundamental redesign, maintaining simplicity while enabling high density

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250167119A1Semiconductor structure
Publication Date: 2025.05.22 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250167119A1 patent drawing
  • US20250167119A1 patent drawing
  • US20250167119A1 patent drawing

AI summary

The present disclosure provides a semiconductor structure. The semiconductor structure includes: a first layer including a plurality of first power lines; a second layer including a plurality of VFETs; a third layer including a plurality of second power line; wherein the second layer is disposed between the first layer and the third layer, a first part of the VETs is connected to the first power lines and a second part of the VETs is connected to the second power lines.