Vertical Gate-All-Around Semiconductor Structure for Short-Channel Effect Control
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Solution Overview
Problem
Transistors face short-channel effects such as drain-induced barrier lowering and degradation of sub-threshold slope due to scaled-down gate lengths, compromising current control and performance.
Innovation Solution
The development of Vertical Gate-All-Around (VGAA) devices with metal-semiconductor compound regions that partially or fully surround vertical channel structures, improving electrostatic control and reducing short-channel effects by providing a lower resistance path for current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If gate length is scaled down to increase switching speed, then switching speed is improved, but short-channel effects worsen
Solution Approach 1:
The patent transitions from planar gate structures to three-dimensional gate-all-around structures that completely surround the channel in vertical orientation. This dimensional change provides electrostatic control from all directions (top, bottom, and sidewalls) rather than just one direction, effectively suppressing short-channel effects while maintaining scaled-down gate lengths for high switching speed
2Ease of manufacture
If conventional planar transistor structure is used, then manufacturing is simpler, but electrostatic control of channel is insufficient
Solution Approach 1:
The invention adopts vertical channel structures with gates wrapping around all sidewalls and the top surface, creating a three-dimensional gate-all-around configuration. This provides superior electrostatic control by enclosing the channel from multiple directions, overcoming the limitations of conventional planar structures while remaining compatible with standard semiconductor manufacturing processes
3Reliability
If gate-all-around structure is implemented, then electrostatic control is improved, but device complexity increases
Solution Approach 1:
The patent implements vertical nanosheet channels with gates formed on all sidewalls and the top surface, creating a three-dimensional gate-all-around structure. This configuration achieves complete electrostatic control of the channel from all directions, significantly improving device performance while the manufacturing process integrates seamlessly with existing semiconductor fabrication techniques
Data Source
AI summary
Vertical gate all-around (VGAA) structures are described. In an embodiment, a structure including a first doped region in a substrate, a first vertical channel extending from the first doped region, a first metal-semiconductor compound region in a top surface of the first doped region, the first metal-semiconductor compound region extending along at least two sides of the first vertical channel, and a first gate electrode around the first vertical channel.