Via Chain Resistance-Shift Diagram for Semiconductor Alignment
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Solution Overview
Problem
Existing semiconductor structures face challenges in accurately measuring critical dimensions and alignment accuracy during manufacturing, particularly due to misalignment between metal lines and vias, which can lead to yield loss and require in-line measurements that are not comprehensive.
Innovation Solution
A semiconductor structure comprising via chains with varying shift distances, where resistances are measured to create a resistance-shift distance diagram, allowing for the determination of critical dimensions and alignment accuracy during a wafer acceptance test.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If in-line measurement is used for single via or metal line, then measurement can be performed during manufacturing, but measurement precision and comprehensiveness are insufficient
Solution Approach 1:
The measurement structure is segmented into multiple via chains, each containing multiple vias with different shift distances. This segmentation allows comprehensive measurement of alignment accuracy between metal lines and vias by measuring resistance across multiple via chains, rather than relying on a single measurement point.
Solution Approach 2:
The invention introduces a new dimension to measurement by creating via chains with varying shift distances (misalignment distances) in addition to the standard via structure. This additional dimensional parameter (shift distance) enables more comprehensive assessment of alignment accuracy between metal lines and vias.
2Manufacturing precision
If dimensional features are measured after components are formed, then measurement can be performed, but yield loss occurs due to misalignment
Solution Approach 1:
The via chains with different shift distances are formed in advance during the manufacturing process, before final assembly. This preliminary action creates a built-in measurement system that can assess alignment accuracy early, allowing for process adjustments before yield loss occurs.
Solution Approach 2:
The resistance measurement of via chains provides feedback on alignment accuracy between metal lines and vias. By analyzing resistance values across via chains with different shift distances, the system generates feedback information that can be used to adjust manufacturing processes and improve alignment accuracy, thereby reducing yield loss.
3Measurement precision
If multiple via chains with different shift distances are created, then comprehensive dimensional feature measurement is enabled, but device complexity increases
Solution Approach 1:
The via chains serve multiple functions: they act as both interconnect structures for electrical signaling and as measurement structures for assessing alignment accuracy. This multi-functionality reduces the need for separate dedicated measurement structures, thereby limiting the increase in device complexity.
Solution Approach 2:
The via chains are self-identifying measurement structures that automatically indicate alignment issues through their resistance characteristics. The structure itself performs the measurement function without requiring external measurement equipment or complex testing apparatus, thereby limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate measurement of critical dimensions and alignment accuracy through a resistance-shift distance diagram, providing a more comprehensive assessment of semiconductor structure quality and reducing yield loss by identifying dimensional features during the testing process.
Implementation Method 1
The via connects the first conductive component to the second conductive component
Implementation Method 2
resistances of the via chains are measured, respectively
Data Source
AI summary
A semiconductor structure includes at least two via chains. Each via chain includes at least one first conductive component, at least one second conductive component and at least one via. The first conductive component has an axis along an extending direction of the first conductive component. The via connects the first conductive component to the second conductive component. The via has a center defining a shift distance from the axis of the first conductive component. The shift distances of the via chains are different. A testing method using such a semiconductor structure includes drawing a resistance-shift distance diagram illustrating a relationship between the resistances of the via chains and the shift distances of the via chains. At least one dimensional feature is obtained from the resistance-shift distance diagram.