Low-Adhesion Coating for Semiconductor Via Contamination Control
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Solution Overview
Problem
The semiconductor industry faces challenges in efficiently and cost-effectively cleaning through-silicon vias (TSVs) and through-polymer vias (TPVs) from contaminants introduced during processing steps, particularly due to the high viscosity of temporary adhesives used in bonding processes, which complicates the cleaning and increases costs and rejects.
Innovation Solution
A method involving a low-adhesion coating applied to the vias before processing, which can be easily removed, preventing contamination and allowing for efficient cleaning at low temperatures, preferably using a non-stick molecular organic compound with a thin coating that can be reapplied and removed multiple times, facilitating quick and inexpensive contamination removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If temporary adhesive is applied to bond substrate to carrier, then bonding strength is improved, but via contamination increases due to adhesive penetration
Solution Approach 1:
A release agent is applied to the substrate surface before the temporary adhesive bonding process. This preliminary action creates a protective barrier that prevents adhesive contamination of the vias while allowing the adhesive to maintain its bonding function on the substrate surface.
Solution Approach 2:
The release agent acts as an intermediary substance between the temporary adhesive and the via structures. It allows the adhesive to perform its bonding function while blocking direct contact between the adhesive and the vias, thus preventing contamination.
2Manufacturing precision
If cleaning process is applied to remove adhesive contamination, then via purity is improved, but processing time and cost increase
Solution Approach 1:
The release agent is applied in advance to prevent contamination from occurring in the first place. This preliminary protective action eliminates or greatly reduces the need for subsequent cleaning operations, saving significant processing time and cost.
Solution Approach 2:
The release agent, which might seem like an additional material step, actually converts the potential harm of adhesive contamination into a benefit by preventing the need for expensive and time-consuming cleaning operations.
3Ease of operation
If temperature is increased to reduce adhesive viscosity, then adhesive flowability is improved, but energy consumption increases
Solution Approach 1:
The release agent serves as a mediator that allows the adhesive to maintain good flowability at lower temperatures by preventing it from penetrating into the vias, thus eliminating the need for high-temperature heating to achieve proper adhesive flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly simplifies and accelerates the cleaning process, reducing contamination-related rejects and costs by enabling fast and energy-efficient removal of impurities from vias, even at room temperature, while maintaining the integrity of the semiconductor substrate.
Implementation Method 1
A method involves a low-adhesion coating being applied to the vias before processing
Implementation Method 2
The coating material is then removed from the vias, for example, by dissolving in solvent
Implementation Method 3
preferably using a non-stick molecular organic compound with a thin coating that can be reapplied and removed multiple times
Data Source
Figure 1~3
Figure 4a~4e
AI summary
The invention relates to a method for temporarily coating cavities (2), with which a semiconductor substrate (1) is at least partially interspersed and which are intended for a permanent coating and/or component mounting, with a temporarily applied coating material (3) before processing steps for processing at least one surface (1o) of the semiconductor substrate (1). The invention further relates to a method for removing a temporary coating from cavities (2) of a semiconductor substrate (1), wherein the coating has been or is applied according to an aforementioned method and wherein thereafter, in particular immediately thereafter, a permanent coating and/or component mounting of the cavities (2) occurs.