Semiconductor Via-Electrode Cavity Crack Prevention
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Solution Overview
Problem
Semiconductor devices with through-substrate vias having cavities are prone to crack diffusion into surrounding materials, leading to reliability issues.
Innovation Solution
A semiconductor device is designed with a metal oxide film between the metal member and the cavity, which suppresses crack propagation by reinforcing the via-electrode and mitigating stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a cavity is formed in the metal member to reduce stress, then stress concentration is reduced, but crack diffusion into surrounding materials occurs
Solution Approach 1:
A metal oxide film is introduced as an intermediary layer between the metal member and the cavity. This film acts as a barrier that prevents crack diffusion from the cavity into the surrounding metal member and surrounding materials, while allowing the cavity to maintain its stress-reducing function. The metal oxide film specifically suppresses crack propagation without compromising the stress relief benefit of the cavity structure.
Solution Approach 2:
The structure combines multiple materials - the metal member, the cavity (void space), and the metal oxide film - to create a composite system. The metal oxide film layer provides crack barrier functionality while the metal member provides structural support and electrical conductivity, and the cavity provides stress relief. This composite structure resolves the contradiction by integrating materials with complementary properties.
2Stress or pressure
If a through-substrate via is formed with a cavity, then stress is mitigated in the via-electrode, but cracks are likely to extend into surrounding materials
Solution Approach 1:
The metal oxide film serves as a protective intermediary between the cavity and the metal member. It specifically targets and suppresses crack extension into the surrounding materials while preserving the stress-mitigation function of the cavity. The film creates a controlled interface that allows stress relief without enabling harmful crack propagation.
3Reliability
If the metal member is reinforced to prevent crack diffusion, then reliability is improved, but stress mitigation in the cavity is reduced
Solution Approach 1:
Rather than reinforcing the entire metal member structure (which would compromise stress mitigation), the invention selectively applies a metal oxide film at the critical interface between the metal member and the cavity. This targeted approach provides crack prevention exactly where needed - at the interface where cracks would naturally propagate - while leaving the rest of the metal member structure sufficiently compliant to maintain stress mitigation in the cavity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal oxide film effectively prevents crack diffusion, enhancing the reliability and durability of the semiconductor device by encapsulating the cavity and distributing stress within the via-electrode.
Implementation Method 1
distributing stress within the via-electrode
Implementation Method 2
suppresses crack propagation by reinforcing the via-electrode
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a metal member, and a metal oxide film. The semiconductor substrate is provided with a through-hole that passes through the semiconductor substrate from one surface to another surface opposite to the one surface. The metal member is provided in the through-hole, and includes a cavity therein defined by an internal surface. The metal oxide film coats the internal surface.