Through-Hole Via Inductor for High-Frequency Device Miniaturization
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Solution Overview
Problem
Conventional through-hole vias in high-frequency devices require larger substrates for electrical connections, limiting the miniaturization of devices and compromising electrical performance.
Innovation Solution
Utilizing conductive materials within through-hole vias as inductors, specifically designing U-shape through-hole via inductors in combination with horizontal inductors, to enhance inductance and shrink device size, while improving electrical performance by optimizing materials and structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional through-hole vias are used for electrical connection between layers, then electrical connection is achieved, but device size increases and space utilization is poor
Solution Approach 1:
The through-hole via structure is designed to serve dual functions: traditional electrical connection between layers and inductor function for high-frequency circuits. By making the via structure multi-functional, it eliminates the need for separate inductor components, thereby reducing device size while maintaining both electrical connection reliability and inductor performance
Solution Approach 2:
The invention merges the electrical connection function and inductor function into a single through-hole via structure. The conductive material filled in the via hole serves both as the connection conductor and as the inductor element, combining multiple functions into one component to achieve space optimization
2Area of stationary object
If through-hole via space is used only for electrical connection, then connection function is achieved, but space utilization is insufficient and device size increases
Solution Approach 1:
The via structure is designed to perform multiple functions within the same physical space: electrical connection between conductive layers and inductor function for high-frequency operation. This multi-functionality maximizes the utilization of the via hole space without increasing the overall via structure size
Solution Approach 2:
The invention utilizes the vertical dimension of the via hole to create inductance through the conductive material filling, transforming the traditional 2D planar inductor design into a 3D vertical structure. This dimensional change allows the via structure to provide inductor function while minimizing substrate area occupation
3Adaptability or versatility
If conductive material is filled in through-hole via, then inductor function is achieved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process merges the via formation and inductor creation into a single integrated process. The conductive material filling step that creates the via connection also simultaneously forms the inductor, combining two manufacturing operations into one to reduce overall process complexity
Solution Approach 2:
The conductive material filling process serves dual purposes: it provides the electrical connection conductors and simultaneously creates the inductor structure. The same material and process step that accomplishes the connection function also accomplishes the inductor function, making the process self-sufficient and reducing manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in higher Q values and reduced device size, achieving better electrical performance and miniaturization of high-frequency devices, particularly effective above 1 GHz frequencies.
Implementation Method 1
a conductive material in a through-hole via is used as a through-hole via inductor (maybe called vertical inductor) for some high-frequency devices
Data Source
AI summary
The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.


