Via Electrical Isolation in High-Density Integrated Circuits
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Solution Overview
Problem
Self-aligned via structures in high-density integrated circuit devices fail to provide effective electrical isolation between vias and adjacent conductive layers.
Innovation Solution
A method involving the formation of recessed insulating and conductive layers, with selective deposition of additional insulating and conductive layers to enhance electrical isolation, including the use of blocking layers and etch stop layers to create openings and extend conductive layers through insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a self-aligned via structure is used to enhance electrical isolation between via and adjacent conductive layer, then electrical isolation is improved, but the structure becomes ineffective in high density integrated circuit devices
Solution Approach 1:
The insulating layer is segmented into multiple portions: a first insulating layer with a recess, a second insulating layer filling the recess, and a third insulating layer formed later. This segmentation creates a multi-level isolation structure that maintains electrical isolation effectiveness in high-density configurations where traditional single-layer self-aligned via structures fail.
Solution Approach 2:
The invention transitions from a planar self-aligned via approach to a three-dimensional recess structure. By creating a recess in the first insulating layer and filling it with a second insulating layer, the isolation structure gains vertical dimensionality, providing enhanced electrical isolation that remains effective even when horizontal spacing between vias is reduced in high-density applications.
2Reliability
If multiple insulating layers are formed to enhance electrical isolation, then electrical isolation is improved, but device complexity increases
Solution Approach 1:
The recess is formed in the first insulating layer before subsequent processing steps. This preliminary action creates a pre-configured isolation structure that guides the formation of the second and third insulating layers, ensuring proper alignment and integration without requiring additional complex alignment steps or processes.
Solution Approach 2:
The second insulating layer is formed to fill the recess and is self-aligned to the first insulating layer structure. The recess geometry itself defines the boundaries and positioning of the second insulating layer, eliminating the need for separate alignment procedures and reducing process complexity despite the additional layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively enhances electrical isolation between conductive layers in integrated circuit devices, improving performance in high-density applications.
Implementation Method 1
removing the blocking layer to form an opening in the second insulating layer
Implementation Method 2
forming a second conductive layer extending through the third insulating layer. The second conductive layer may contact the first conductive layer
Data Source
AI summary
Integrated circuit devices and methods of forming the same are provided. The methods of forming an integrated circuit device may include forming a first insulating layer and a first conductive layer on a substrate and selectively forming a second insulating layer on the first insulating layer. The first insulating layer may include a recess, and the first conductive layer may be in the recess of the first insulating layer. The second insulating layer may include a first opening exposing a surface of the first conductive layer. The methods may also include forming a third insulating layer on the second insulating layer and the first conductive layer, forming a second opening extending through the third insulating layer and exposing the first conductive layer, and forming a second conductive layer in the second opening.