Via Structure Measurement Using Optical Reflectometry
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Solution Overview
Problem
Current methods for measuring via structures in semiconductor manufacturing, particularly those with high density, high aspect ratio, or small apertures, are slow and destructive, failing to provide non-destructive measurements of depth and bottom profile effectively.
Innovation Solution
A system and method utilizing a reflectometer to collect and compare diffraction spectrums with simulated spectrums, determining via structure parameters such as depth and bottom profile through frequency and magnitude information, employing an ellipsoid model to simulate and analyze diffraction patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electronic microscopes or spring probes are used to measure via structures with high density, high aspect ratio or small aperture, then measurement capability is improved, but measurement speed decreases and the measurement becomes destructive
Solution Approach 1:
The patent replaces mechanical measurement systems (electronic microscopes, spring probes) with an optical measurement system using reflectometry. The system uses optical reflectance signals to measure via structure parameters non-destructively and rapidly, eliminating the speed and destructiveness limitations of mechanical methods while maintaining measurement precision
Solution Approach 2:
The patent measures multiple via structure parameters (depth, bottom profile, via diameter, mandrel diameter, mandrel roughness, via liner thickness, via fill material thickness) simultaneously through optical reflectance parameter analysis, improving productivity by obtaining all measurements in a single non-destructive optical scan rather than multiple sequential mechanical measurements
2Measurement precision
If electronic microscopes or spring probes are used to measure via structures with high density, high aspect ratio or small aperture, then measurement capability is improved, but the via structures are damaged
Solution Approach 1:
The patent replaces mechanical measurement systems with an optical reflectometry system that measures via structures non-destructively. The optical method uses reflected light signals to characterize via parameters without physical contact or damage to the delicate high-density, high-aspect-ratio via structures
Solution Approach 2:
The patent creates an optical model/representation of the via structure by analyzing reflectance signals and comparing them with simulated diffraction spectrums. This optical copying method allows measurement without direct mechanical interaction that would damage the structure
3Object-affected harmful factors
If optical microscope is used to measure large sized via structures with aperture greater than 10 micrometers, then measurement is non-destructive, but measurement capability for high density or small aperture vias is lost
Solution Approach 1:
The patent extends optical measurement capability to small aperture and high-density vias by analyzing specific parameters in the diffraction spectrum (frequency information for depth, magnitude information for bottom profile). This parameter-based analysis enables the optical method to resolve features much smaller than the 10 micrometer limitation of conventional optical microscopy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables fast and non-destructive measurement of via structure parameters, suitable for high-density and high-aspect-ratio applications, improving measurement accuracy and preventing damage to the structures.
Implementation Method 1
a reflectometer is configured to collect a measured diffraction spectrum of at least a via structure
Data Source
AI summary
A system for via structure measurement is disclosed. The system comprises a reflectometer, a simulation unit and a comparing unit. The reflectometer is configured to collect a measured diffraction spectrum of at least a via. The simulation unit is configured to provide simulated diffraction spectrums of the at least a via. The comparing unit is configured to determine at least a depth and at least a bottom profile of the at least a via by comparing the collected diffraction spectrum and the simulated diffraction spectrums.


