Through Substrate Via Noise Isolation via Segmented Liner

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Solution Overview

Problem

Conventional through substrate via structures in semiconductor ICs face challenges in reducing noise interference, limiting the scaling down of pitch and distance between vias and devices due to inadequate noise isolation.

Innovation Solution

A through substrate via structure is designed with a metal layer and a liner structure that includes at least two insulation liners and one conductive shielding layer, which significantly reduces noise interference by conformally covering the side and bottom surfaces, allowing for a more compact design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If conventional through substrate via structures are used, then manufacturing process is simple, but noise interference between vias and devices increases

Engineering Contradiction:

Improvenoise interferenceVSAvoidvia structure complexity

Core Design Contradiction:

Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The liner structure is segmented into multiple insulation liners and conductive shielding layers, creating a multi-layered configuration that provides superior noise isolation compared to conventional single-layer structures

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The conductive shielding layer acts as an intermediary element between the metal layer and surrounding environment, blocking noise interference while the insulation liners provide additional isolation barriers

Inventive Principle:

Principle #24Intermediary (Mediator)

2Area of moving object

If pitch and distance between vias and devices are reduced, then device density increases, but noise interference worsens

Engineering Contradiction:

Improvedevice densityVSAvoidnoise interference

Core Design Contradiction:

Area of moving objectVSObject-affected harmful factors

Solution Approach 1:

The solution moves from two-dimensional planar isolation to three-dimensional multi-layered liner structure with conductive shielding layers, enabling effective noise isolation even when horizontal spacing is reduced

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The liner structure combines multiple materials including insulation liners and conductive shielding layers in a composite configuration that provides both electrical isolation and noise shielding properties

Inventive Principle:

Principle #40Composite materials

3Object-affected harmful factors

If conventional liner structures are used, then manufacturing process is simple, but noise isolation is insufficient

Engineering Contradiction:

Improvenoise isolationVSAvoidmanufacturing complexity

Core Design Contradiction:

Object-affected harmful factorsVSEase of manufacture

Solution Approach 1:

The liner structure is divided into multiple discrete layers (insulation liners and conductive shielding layers) that can be formed through sequential deposition processes, enabling precise control of each layer's properties

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The multi-layer liner structure with nested insulation liners and conductive shielding layers provides comprehensive noise isolation, with each layer contributing to the overall shielding effectiveness

Inventive Principle:

Principle #7Nested doll (Nesting)

Data Source

PatentUS20170358493A1Through substrate via structure for noise reduction

Publication Date: 2017.12.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device includes a substrate and a through substrate via structure. The substrate has a through via hole. The through substrate via structure is disposed in the through via hole. The through substrate via structure disposed in the through via hole includes a liner structure and a metal layer. The liner structure includes at least two insulation liners and at least one conductive shielding layer disposed between the insulation liners, in which the insulation liners and the at least one conductive shielding layer conformally cover a sidewall and a bottom of the through via hole. The metal layer covers the liner structure and fills the through via hole.