3D Semiconductor Via Plug Support Pattern for CMP Alignment

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Solution Overview

Problem

The increasing integration of semiconductor devices leads to challenges in vertically aligning fine contact plugs with large aspect ratios, and the CMP process causes dishing issues affecting the flatness and alignment between contact plugs.

Innovation Solution

Incorporating support patterns that contact the side surface of lower via plugs, these patterns are made of the same material as the lower conductive layer and have the same vertical thickness, helping to alleviate dishing and improve alignment margins by acting as a CMP stopper or resistor, ensuring top surfaces of the via plugs and support patterns are coplanar.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Shape

If CMP process is performed to planarize the surface, then flatness is improved, but dishing occurs affecting alignment between contact plugs

Engineering Contradiction:
ImproveflatnessVSAvoidalignment between contact plugs
Core Design Contradiction:
ShapeVSManufacturing precision

Solution Approach 1:

The support pattern is formed in advance before the CMP process to prevent dishing from occurring in the first place. By having the support pattern already in place, it provides structural reinforcement that maintains planarity during subsequent processing steps, eliminating the need to correct dishing after it occurs.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The support pattern acts as an intermediary structure between the substrate and the contact plugs. It provides a stable reference plane that mediates the CMP process, ensuring that the contact plugs can be accurately aligned without being affected by dishing deformations.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If pitch and space between interconnections and contact plugs are reduced for higher integration, then integration degree is improved, but vertical alignment of fine contact plugs with large aspect ratio becomes difficult

Engineering Contradiction:
Improveintegration degreeVSAvoidvertical alignment of contact plugs
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The support pattern extends in the horizontal dimension to provide a broader base of support for the contact plugs. This lateral extension creates a larger alignment margin, making it easier to achieve vertical alignment even when the contact plugs have large aspect ratios and are closely spaced.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The support pattern serves as an intermediary structure that facilitates the alignment process. It provides visual and physical reference points that guide the positioning of contact plugs, making the alignment process more reliable despite reduced pitch and space constraints.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20240179918A1Three-dimensional semiconductor device having a support pattern in contact with a side surface of a contact plug
Publication Date: 2024.05.30 SK HYNIX INC
  • US20240179918A1 patent drawing
  • US20240179918A1 patent drawing
  • US20240179918A1 patent drawing

AI summary

The semiconductor device includes a substrate having a cell area and a via area; a transistor and a logic interconnection disposed over the substrate; a lower insulating layer covering the transistor and the logic interconnection; a lower conductive layer on the lower insulating layer in the cell area; a support pattern disposed on the lower insulating layer in the via area; a lower via plug having a side surface in contact with the support pattern and a bottom surface in contact with the logic interconnection; a word line stack disposed on the lower conductive layer in the cell area; an dielectric layer stack disposed on the support pattern in the via area; a vertical channel pillar penetrating the word line stack to be connected to the lower conductive layer; and an upper via plug penetrating the dielectric layer stack to be vertically aligned with the lower via plug.