Via Structure Extending Beyond Conductive Layer for Crack Prevention
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Solution Overview
Problem
Current semiconductor devices face leakage current issues due to improper layer-to-layer distance in through vias and grinding processes, which can cause the semiconductor substrate to crack, leading to decreased yield.
Innovation Solution
A semiconductor device with a via structure extending beyond a conductive structure, where the via structure includes a first insulation material and interconnection metal, and a method involving etching processes to form openings in the conductive structure that align with through holes in the substrate, enhancing structural strength and preventing cracking during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If grinding and drilling processes are used to form through vias on a base material, then vertical electrical connections can be established, but the base material may crack due to weak structural strength, decreasing device yield
Solution Approach 1:
The via structure is formed extending beyond the conductive structure before the grinding process. This preliminary formation of the via structure provides reinforcement to the base material, preventing cracks during subsequent grinding and drilling operations.
Solution Approach 2:
The via structure acts as a reinforcing element that cushions and distributes stress during the grinding process. By having the via structure in place beforehand, the mechanical stress from grinding is dispersed, preventing crack propagation in the base material.
2Reliability
If through vias are used for vertical electrical connections, then electrical connectivity is achieved, but leakage current occurs due to improper layer-to-layer distance
Solution Approach 1:
The via structure extends in the vertical dimension beyond the conductive structure, creating an additional protective layer. This dimensional extension increases the layer-to-layer distance and provides extra insulation, preventing leakage current while maintaining electrical connectivity.
Solution Approach 2:
The via structure serves as an intermediary element between the conductive structure and the base material. It provides electrical connection while simultaneously acting as an insulating barrier that prevents leakage current, mediating between conductive and insulating requirements.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a conductive structure and at least one via structure. The conductive structure is disposed on an upper surface of the semiconductor substrate. The at least one via structure is disposed in the semiconductor substrate. A portion of the at least one via structure extends beyond the conductive structure.