Vibration Device Substrate Capacitor Frequency Tuning
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Solution Overview
Problem
Existing vibration devices face challenges in forming suitable capacitance for frequency adjustment due to limitations in through electrode configurations, leading to potential inadequacies in capacitance formation for frequency tuning.
Innovation Solution
The vibration device incorporates capacitors with recesses on the semiconductor substrate, filled with electrically-conductive material and insulated by an insulating film, which do not contact the terminals, allowing for adjustable capacitance and frequency tuning through varying recess depths and areas, and a frame for isolating potential differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a through electrode is used to electrically couple the upper part electrode and the power supply terminal, then electrical connection is achieved, but the capacitance is determined by the through electrode configuration and cannot be adjusted for frequency tuning
Solution Approach 1:
The patent divides the electrode structure into separate components: the through electrode for electrical connection and a distinct capacitor structure formed by recesses with insulating films and conductive materials. This segmentation allows the capacitor to be independently designed and adjusted for frequency tuning without affecting the electrical coupling function of the through electrode.
Solution Approach 2:
The patent transitions from forming capacitance in the vertical dimension (through electrode) to forming capacitance in the horizontal dimension (recesses on the substrate surface). This dimensional change enables independent optimization of electrical connection and capacitance values for frequency adjustment.
2Manufacturing precision
If capacitors are formed using through electrodes, then electrical coupling is achieved, but the capacitance value is fixed by the through electrode geometry and cannot be optimized for frequency adjustment
Solution Approach 1:
The patent enables capacitance value control by changing geometric parameters of the capacitor structure, specifically the depth, area, and shape of recesses, as well as the properties of insulating films and conductive materials. These parameter changes allow precise adjustment of capacitance values to achieve desired frequency tuning without being constrained by through electrode geometry.
3Ease of manufacture
If the electrically-conductive material contacts the terminal, then electrical connection is simplified, but the capacitor cannot function properly for frequency adjustment
Solution Approach 1:
The patent extracts the capacitor function from the electrical connection path by positioning the electrically-conductive material of the capacitor to not contact the terminal. This separation ensures that the capacitor operates independently for frequency adjustment while the through electrode maintains reliable electrical connection between components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables precise adjustment of oscillation signal frequencies, reduces integrated circuit thickness, and simplifies manufacturing by allowing capacitors to be formed in the substrate without increasing the device's size or complexity.
Implementation Method 1
an insulating film disposed on an inside surface of the first recess
Implementation Method 2
has a first capacitance between the electrically-conductive material and the semiconductor substrate
Data Source
AI summary
A vibration device includes a semiconductor substrate having a first surface and a second surface in an obverse-reverse relationship, a vibration element disposed on the first surface, a lid bonded to the first surface, an integrated circuit disposed on the first surface, a terminal disposed on the second surface, a through electrode which penetrates the semiconductor substrate, and is configured to electrically couple the terminal and the integrated circuit to each other, and a first capacitor which is provided with a first recess provided to the semiconductor substrate and opening in the first surface, an insulating film disposed on an inside surface of the first recess, and an electrically-conductive material filling the first recess, and has a first capacitance between the electrically-conductive material and the semiconductor substrate, wherein the electrically-conductive material does not have contact with the terminal at the second surface side.