Vibration Element Through-Electrode Layout for Leakage Isolation
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Solution Overview
Problem
The growth in size of semiconductor devices due to the need for cylindrical through electrodes and insulating films around every through electrode leads to reliability issues, such as insulation failure and current leakage, which affect the performance and durability of the devices.
Innovation Solution
A vibration device design that includes a semiconductor substrate with integrated circuits and through electrodes, where the second through electrode is positioned inside a frame with an insulating film and electrically conductive material, preventing current leakage by isolating the electrical connections within the frame, while the first through electrode is outside the frame, allowing substrate potential to be applied without size increase.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cylindrical through electrodes with insulating films are disposed around every through electrode, then insulation reliability is improved, but device size increases
Solution Approach 1:
The patent divides the substrate into distinct regions using a frame structure that separates through electrodes into different zones. The frame creates isolated regions where current leakage is prevented by spatial segmentation rather than requiring insulating films around each electrode, thus maintaining reliability while reducing overall device size.
Solution Approach 2:
The frame structure provides localized insulation and current path control only in specific critical areas where leakage prevention is necessary, rather than applying insulating films universally around all through electrodes. This selective approach maintains reliability where needed while minimizing unnecessary size increase in non-critical areas.
2Area of stationary object
If through electrodes are positioned close together to reduce device size, then area is reduced, but current leakage to substrate increases
Solution Approach 1:
The frame structure acts as an intermediary element between closely spaced through electrodes and the substrate. It provides a controlled interface that prevents direct current leakage paths to the substrate while allowing the through electrodes to be positioned close together, thus enabling compact design without harmful current leakage.
Solution Approach 2:
The patent introduces a vertical dimension by using a frame structure that extends through the substrate thickness, creating three-dimensional current path control. This allows horizontal spacing between through electrodes to be reduced while the vertical frame structure maintains electrical isolation from the substrate, preventing current leakage in the third dimension.
Data Source
AI summary
A vibration device includes a semiconductor substrate having a first surface and a second surface, an integrated circuit disposed on the first surface, a first terminal which is disposed on the second surface and to which a substrate potential is applied, a second terminal which is disposed on the second surface and to which a potential different from the substrate potential is applied, a first through electrode which is configured to electrically couple the first terminal and the integrated circuit to each other, a second through electrode which is configured to electrically couple the second terminal and the integrated circuit to each other, a frame which has an insulating property, a vibration element disposed on the first surface, and a lid bonded to the first surface, wherein the first through electrode is located outside the frame, and the second through electrode is located inside the frame.