Vibrator Interconnection Structure for Flat Bonding and Reliability
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Solution Overview
Problem
Existing semiconductor devices face issues with interconnection disconnection and bonding failure between the vibrator and interconnection due to similar configurations of copper-plated interconnections, leading to instability and reduced reliability.
Innovation Solution
The vibrator device employs a semiconductor substrate with through holes containing first interconnections formed by electrolytic plating and second interconnections formed by sputtering, which are smoother and thinner, along with a bonding member to secure the vibrator, ensuring robust electrical coupling and preventing disconnection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If copper plating is used for both interconnections in the through hole and on the upper surface, then manufacturing simplicity is maintained, but disconnection of interconnection and bonding failure become apt to occur
Solution Approach 1:
The patent applies different formation methods to different locations of the interconnection structure. The first interconnection in the through hole is formed by copper plating for good fillability, while the second interconnection on the upper surface is formed by sputtering to achieve a flat surface with low surface roughness suitable for bonding. This local differentiation resolves the contradiction by optimizing each location for its specific function.
Solution Approach 2:
The interconnection structure is segmented into two distinct parts: the first interconnection formed by plating and the second interconnection formed by sputtering. This segmentation allows each part to be optimized independently - the plated portion provides robust through-hole filling while the sputtered portion provides a flat bonding surface, thereby preventing both disconnection and bonding failure.
2Device complexity
If the same formation method is used for all interconnection parts, then process complexity is reduced, but surface roughness causes bonding failure
Solution Approach 1:
The patent recognizes that different locations require different surface qualities. The through-hole interconnection needs good adhesion and fillability (achieved by plating), while the upper surface interconnection needs flatness for bonding (achieved by sputtering). This local quality differentiation resolves the contradiction between process simplicity and bonding precision.
3Reliability
If copper plating is used to ensure good electrical conductivity, then electrical performance is improved, but surface roughness increases leading to bonding failure
Solution Approach 1:
The interconnection is segmented into two functional zones: the plated region that provides electrical conductivity and adhesion, and the sputtered region that provides a flat bonding surface. This segmentation allows the system to achieve both good electrical performance and bonding compatibility simultaneously.
Solution Approach 2:
The patent changes the formation method parameter from plating to sputtering for the upper surface interconnection. This parameter change reduces surface roughness from the typical plated surface to a flat sputtered surface, enabling successful bonding while maintaining electrical conductivity through the continuous interconnection structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of the vibrator device by preventing interconnection disconnection and bonding failure, stabilizing vibration characteristics, and maintaining high electrical conductivity.
Implementation Method 1
first interconnections which are disposed on inner circumferential surfaces of the through holes and are electrically coupled to the conductive layers
Implementation Method 2
second interconnections which are disposed on the first surface and include interconnection layers smaller in surface roughness than the first interconnections
Data Source
AI summary
A vibrator device includes a semiconductor substrate which includes a first surface and a second surface and is provided with a through hole penetrating the first surface and the second surface, a semiconductor circuit which is disposed at the second surface side and includes a conductive layer exposed in the through hole, a first interconnection which is disposed on an inner circumferential surface of the through hole and is electrically coupled to the conductive layer, a second interconnection which is disposed on the first surface and includes an interconnection layer smaller in surface roughness than the first interconnection and a covering layer covering the interconnection layer, and a vibrator which is located at the first surface side and is bonded to the second interconnection via a bonding member.


