Virtual 3D Imaging for Semiconductor Wafer Defect Analysis

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Solution Overview

Problem

Conventional off-line failure analysis in semiconductor wafer inspection is time-consuming and costly, disrupting IC chip manufacturing and leading to potential defects in produced chips.

Innovation Solution

Implementing a system that converts 2D images from optical inspection tools into virtual 3D images using material-specific image intensity information, allowing for in-line failure analysis to confirm defects and determine their root cause, thereby enabling real-time advanced process control at a reduced cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If off-line failure analysis is performed using conventional techniques, then defect root cause can be determined, but the process is time-consuming and costly

Engineering Contradiction:
Improvedefect analysis accuracyVSAvoidfailure analysis time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces mechanical/physical failure analysis techniques (AFM, DPA) with a computational image processing system that converts 2D optical images into virtual 3D images using material-specific intensity information, enabling rapid defect analysis without physical sample manipulation

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent creates a virtual 3D copy of the defect from 2D optical image data, allowing analysis of three-dimensional defect characteristics without performing physical 3D reconstruction or cross-sectioning operations on the actual sample

Inventive Principle:
Principle #26Copying

2Reliability

If off-line failure analysis is performed, then defect confirmation is achieved, but manufacturing disruption occurs

Engineering Contradiction:
Improvedefect confirmation accuracyVSAvoidmanufacturing throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent performs failure analysis using virtual 3D imaging during the inspection phase before manufacturing decisions are made, enabling proactive defect identification and process adjustment without halting production for retrospective analysis

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces time-consuming physical analysis methods with computational image processing that delivers rapid defect confirmation, maintaining manufacturing continuity while ensuring product quality

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Loss of information

If conventional failure analysis techniques are used, then detailed defect information is obtained, but cost increases

Engineering Contradiction:
Improvedefect information completenessVSAvoidanalysis cost
Core Design Contradiction:
Loss of informationVSEase of manufacture

Solution Approach 1:

The patent substitutes expensive physical analysis equipment and procedures with a software-based virtual 3D imaging system that extracts comprehensive defect information from standard optical inspection data, significantly reducing analysis costs

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent creates a multi-functional system that uses material-specific intensity information to generate virtual 3D images applicable to various defect types and materials, replacing multiple specialized analysis tools with a single versatile platform

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10580615B2System and method for performing failure analysis using virtual three-dimensional imaging
Publication Date: 2020.03.03 GLOBALFOUNDRIES US INC
  • US10580615B2 patent drawing
  • US10580615B2 patent drawing
  • US10580615B2 patent drawing

AI summary

Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).