Virtual Chip Yield Prediction for Wafer Defect Mapping

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Solution Overview

Problem

Semiconductor wafers are prone to contamination during processing, leading to defects such as hot spots, which can result in decreased productivity and quality due to defocus issues, and existing methods fail to effectively predict and prevent these defects across the entire wafer and equipment areas.

Innovation Solution

A method and apparatus that utilize wafer-level data to generate virtual chips, map test results, compute defect rates, and calculate a defect index to predict semiconductor yield by identifying and quantifying defects on both the frontside and backside of wafers, as well as in specific equipment areas, enabling early defect detection and process optimization.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If wafer-level measurement and defect detection are implemented across the entire wafer surface, then manufacturing precision and defect detection capability are improved, but device complexity and measurement time increase

Engineering Contradiction:
Improvedefect detection capabilityVSAvoidmeasurement system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent segments the wafer measurement process into multiple discrete steps: initial wafer-level mapping to identify defect-prone regions, selective chip-level inspection of affected areas, and virtual chip generation for defect correlation. This segmentation allows comprehensive defect detection without requiring exhaustive measurement of the entire wafer surface, thereby reducing system complexity while maintaining high detection capability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary wafer-level measurement and defect mapping before proceeding to detailed chip-level inspection. By identifying defect-prone regions in advance through wafer-level scanning, the system can focus subsequent measurement resources on specific areas of interest, reducing overall measurement time and system complexity while maintaining high defect detection capability.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If comprehensive wafer-level defect detection is performed, then yield prediction accuracy is improved, but measurement time and productivity are reduced

Engineering Contradiction:
Improveyield prediction accuracyVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent divides the measurement process into two stages: a rapid wafer-level screening phase that identifies defect-prone regions, followed by a focused chip-level inspection phase that examines only the identified problem areas. This segmentation enables accurate yield prediction through comprehensive defect analysis while minimizing total measurement time by avoiding exhaustive inspection of defect-free regions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs wafer-level measurement that covers the entire wafer surface to identify defect patterns, but then limits detailed chip-level inspection to only those regions where defects were detected. This partial action approach ensures accurate yield prediction by examining all potential defect sources while avoiding redundant measurement of clean areas, thus reducing overall measurement time.

Inventive Principle:
Principle #16Partial or excessive action

3Manufacturing precision

If defect detection covers both frontside and backside of wafers, then manufacturing precision is improved, but device complexity and processing time increase

Engineering Contradiction:
Improvedefect detection coverageVSAvoidprocessing time
Core Design Contradiction:
Manufacturing precisionVSDuration of action of moving object

Solution Approach 1:

The patent segments the dual-sided inspection process by first performing wafer-level mapping that identifies defects on both frontside and backside, then using this information to guide selective chip-level inspection. The system processes each side systematically and correlates defects between sides through virtual chip generation, achieving comprehensive defect coverage while managing processing time through structured segmentation of the inspection workflow.

Inventive Principle:
Principle #1Segmentation

4Measurement precision

If virtual chip generation and coordinate transformation are implemented, then defect rate computation accuracy is improved, but device complexity increases

Engineering Contradiction:
Improvedefect rate computation accuracyVSAvoiddata processing complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces virtual chips as an intermediary data structure that bridges wafer-level measurement data and chip-level defect analysis. The virtual chip generation process creates a computational model that automatically handles coordinate transformations and defect mapping between different reference frames. This intermediary approach simplifies the overall system by automating complex data processing tasks rather than requiring manual coordinate transformations, thereby improving defect rate computation accuracy while managing data processing complexity through algorithmic automation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20240135523A1Semiconductor yield prediction method and apparatus
Publication Date: 2024.04.25 SAMSUNG ELECTRONICS CO LTD
  • US20240135523A1 patent drawing
  • US20240135523A1 patent drawing
  • US20240135523A1 patent drawing

AI summary

A method of predicting a semiconductor yield includes receiving wafer level data generated by measuring a plurality of wafers, generating a plurality of virtual chips corresponding to the plurality of wafers based on the wafer level data, mapping a test result of the plurality of wafers to the plurality of virtual chips, computing a defect rate of the plurality of virtual chips according to defects based on a result of the mapping, and computing a defect index of the equipment based on the defect rate.