3D Virtual Fabrication for Directed Self-Assembly Modeling
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Solution Overview
Problem
Current semiconductor fabrication methods rely on trial-and-error experimental approaches, which are costly and time-consuming due to the increasing complexity of advanced technology node processes, and existing CAD and TCAD tools are inadequate for modeling the entire integrated process flow effectively.
Innovation Solution
A virtual fabrication environment is developed that includes a 3D modeling engine to simulate the Directed Self-Assembly (DSA) step within the semiconductor device structure fabrication process, allowing for the creation of a 3D model that represents the possible variations resulting from DSA, enabling faster and more economical semiconductor device structure development by modeling the entire integrated process flow geometrically rather than physiologically.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trial-and-error experimental fabrication methods are used, then process development can be performed with existing tools, but the cost and time required increase significantly due to the complexity of advanced technology node processes
Solution Approach 1:
The patent creates a virtual copy of the physical fabrication environment through a 3D virtual fabrication system that replicates fabrication processes, tools, and materials. This virtual model allows process development to be performed in silico, eliminating the need for repeated physical experimental runs while maintaining predictive accuracy for structure formation
Solution Approach 2:
The patent replaces physical mechanical fabrication processes with computational simulations. The 3D virtual fabrication engine uses algorithms to model material deposition, etching, and self-assembly processes, substituting physical trial-and-error experimentation with mathematical and physical principle-based predictions
2Reliability
If trial-and-error experimental fabrication methods are used, then process development can be performed with existing tools, but the cost increases significantly due to the complexity of advanced technology node processes
Solution Approach 1:
The patent creates a virtual copy of the physical fabrication environment through a 3D virtual fabrication system that replicates fabrication processes, tools, and materials. This virtual model allows process development to be performed in silico, eliminating the need for repeated physical experimental runs while maintaining predictive accuracy for structure formation
Solution Approach 2:
The patent uses computationally inexpensive virtual models and simulations instead of expensive physical wafers and fabrication runs. Each virtual fabrication experiment costs negligible computational resources compared to the thousands of dollars required for physical experimental wafers, allowing extensive process exploration at minimal cost
3Adaptability or versatility
If conventional CAD and TCAD tools are used for modeling, then existing toolchains can be maintained, but the ability to model the entire integrated process flow effectively is insufficient
Solution Approach 1:
The patent merges multiple specialized modeling tools (lithography, deposition, etching, self-assembly) into a single integrated 3D virtual fabrication platform. This unified system handles the entire process flow from substrate preparation through final pattern formation, enabling comprehensive process development without requiring coordination between separate tools
Solution Approach 2:
The patent creates a universal virtual fabrication platform that can model diverse fabrication processes and materials through a common framework. The system handles different process types (photolithography, directed self-assembly, etching) and materials (polymers, semiconductors, metals) using consistent modeling principles and interfaces
4Measurement precision
If physical experimental wafers are used for process development, then real fabrication data can be obtained, but the duration of fabrication runs becomes extremely long (weeks to months)
Solution Approach 1:
The patent replaces physical mechanical fabrication processes with computational simulations. The 3D virtual fabrication engine uses algorithms to model material deposition, etching, and self-assembly processes, substituting physical trial-and-error experimentation with mathematical and physical principle-based predictions
Solution Approach 2:
The patent performs preliminary virtual fabrication experiments to predict process outcomes before committing to physical fabrication runs. The 3D model forecasts structure formation results, allowing process parameters to be optimized in silico, so that when physical runs are performed, they can be executed more quickly and with higher confidence in expected outcomes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the need for physical experimentation, allowing for faster and more cost-effective development of semiconductor processes by predicting the complete 3D structures of devices and circuits, optimizing fabrication sequences, and providing fast verification of process assumptions and visualization of complex interrelationships.
Implementation Method 1
Directed Self-Assembly (DSA) is a process which creates patterns with features smaller than is possible with 193 nm optical lithography. In DSA, a thin polymer melt of polymer chains made of dissimilar blocks of monomers is deposited as a thin film on a substrate. During an anneal (initial heating and slow cooling) process, the dissimilar blocks separate and self-assemble into ordered structures.
Implementation Method 2
During an anneal (initial heating and slow cooling) process, the dissimilar blocks separate and self-assemble into ordered structures.
Data Source
AI summary
The modeling of a DSA step within a virtual fabrication process sequence for a semiconductor device structure is discussed. A 3D model is created by the virtual fabrication that represents and depicts the possible variation that can result from applying the DSA step as part of the larger fabrication sequence for the semiconductor device structure of interest. Embodiments capture the relevant behavior caused by polymer segregation into separate domains thereby allowing the modeling of the DSA step to take place with a speed appropriate for a virtual fabrication flow.