Virtual Interconnection Units for Semiconductor Stress Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In advanced semiconductor technology, the decreasing dielectric constant of dielectric layers between interconnection layers leads to reduced mechanical performance and interfacial binding force, causing chip package interaction issues and reliability concerns due to cracks and stress concentration.
Innovation Solution
A method and apparatus for designing an interconnection structure by generating and manufacturing virtual interconnection units with metal layers connected by vias, which are uniformly distributed to alleviate micro loading effects and provide support against external forces, preventing crack propagation and improving shock-resistance and compression-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the dielectric constant of dielectric layers is reduced to achieve higher integration density, then the mechanical performance and interfacial binding force of dielectric layers deteriorate, causing cracks and reliability issues
Solution Approach 1:
The patent divides the chip area into multiple interconnection units, each containing a subset of metal interconnection layers. By segmenting the interconnection structure into reusable units that can be stacked and combined, the design achieves higher integration density while maintaining mechanical integrity through standardized unit designs with adequate dielectric layer support.
Solution Approach 2:
The patent performs preliminary design and validation of interconnection units before final chip fabrication. The design process includes simulating mechanical stress distribution and evaluating dielectric layer performance under various stacking configurations, allowing optimization of unit designs to prevent cracks before manufacturing.
2Quantity of substance
If more metal interconnection layers are stacked to increase integration density, then stress concentration increases causing cracks and interface layering
Solution Approach 1:
Instead of stacking all metal layers continuously, the patent segments them into discrete interconnection units (e.g., units containing 2-4 layers each) that are distributed across the chip area. This segmentation reduces cumulative stress concentration while achieving equivalent total layer count through spatial distribution rather than vertical stacking alone.
Solution Approach 2:
The patent transitions from purely vertical stacking of metal layers to a two-dimensional distribution of interconnection units across the chip surface. Units are arranged in arrays with spacing that allows stress dissipation, converting the stress management problem from a one-dimensional vertical challenge to a two-dimensional spatial optimization problem.
3Reliability
If virtual interconnection units are uniformly distributed to alleviate micro loading effects, then the design complexity and manufacturing process complexity increase
Solution Approach 1:
The patent designs standardized interconnection units that serve multiple functions: electrical interconnection, mechanical support for dielectric layers, and stress distribution elements. This multi-functionality reduces overall design complexity compared to adding separate dedicated structures for each function, as the same units provide both electrical and mechanical benefits.
Solution Approach 2:
The patent optimizes parameters of interconnection units (such as unit size, spacing, and metal layer configuration) to achieve uniform stress distribution. By carefully selecting these parameters within practical manufacturing ranges, the design achieves improved shock and compression resistance without excessively complicating the manufacturing process.
Data Source
AI summary
The present disclosure provides methods and apparatus for designing an interconnection structure and methods for manufacturing an interconnection structure, and relates to the technical field of semiconductors. An implementation of the method may include: designing n virtual interconnection units according to a number of metal interconnection layers in a circuit area of a chip design drawing, where an ith virtual interconnection unit includes i metal interconnection layers, and where adjacent metal interconnection layers in a jth virtual interconnection unit are connected by using vias, and n≥2, 1≤i≤n, and 2≤j≤n; and filling an area in the chip design drawing outside the circuit area with virtual interconnection units, where the jth virtual interconnection unit is filled, and a (j−1)th virtual interconnection unit is not filled unless there is no space in the area for the jth virtual interconnection unit.