Virtual Wafer Calibration for Full-Flow Semiconductor Process Modeling
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Solution Overview
Problem
Conventional mechanical CAD tools are inadequate for simulating material addition, removal, and modification processes in semiconductor fabrication, while TCAD tools are limited to small regions and fail to model the complex interactions between processes in advanced technologies, leading to costly and time-consuming trial-and-error experimentation.
Innovation Solution
A virtual fabrication environment with an analytics module for process model calibration and variability analysis, enabling identification of key parameters and predictive 3D modeling of entire semiconductor device structures, using geometry-based simulations and virtual metrology to align with physical fab results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If trial-and-error experimental methodology is used to develop fabrication processes, then process development can be performed with conventional tools, but the cost and duration increase dramatically
Solution Approach 1:
The patent creates a virtual fabrication environment that copies and simulates the physical fabrication process. Instead of physically fabricating experimental wafers, the system creates virtual wafers and processes that replicate real fabrication conditions, allowing process development without physical trial-and-error experimentation
Solution Approach 2:
The patent replaces the mechanical physical fabrication system with a computational simulation system. The virtual fabrication environment uses software-based modeling to substitute for physical fabrication equipment, eliminating the need for actual material processing while maintaining process development capabilities
2Manufacturing precision
If TCAD tools are used for physics-based simulations, then material composition changes can be modeled, but the scope is restricted to very small regions and single transistors
Solution Approach 1:
The patent transitions from 2D cross-sectional simulations typical of TCAD to full 3D virtual wafer modeling. This dimensional expansion allows the system to model entire wafers with multiple devices and circuits simultaneously, capturing process interactions across the full wafer surface rather than isolated regions
Solution Approach 2:
The virtual fabrication environment is designed to model multiple device types and circuit configurations simultaneously on a single virtual wafer. The system provides a universal platform that can handle diverse fabrication scenarios, unlike TCAD which is specialized for single-transistor analysis
3Adaptability or versatility
If conventional mechanical CAD tools are used for modeling, then general-purpose design can be performed, but they cannot automatically mimic material addition, removal, and modification processes
Solution Approach 1:
The patent implements a hybrid modeling approach that uses geometric parameters to represent fabrication processes. The system translates physical material addition, removal, and modification operations into geometric transformations of virtual wafer structures, allowing conventional CAD tools to accurately simulate fabrication processes through parameter-based geometric modeling
Data Source
AI summary
A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing key parameter identification, process model calibration and variability analysis is discussed.