Volatile Memory Refresh Management via Unequal Intervals
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Solution Overview
Problem
Volatile semiconductor memory devices like DRAM require frequent refresh operations to maintain data, leading to increased power consumption and high-frequency radiation noise generation, which is inefficient and undesirable.
Innovation Solution
A semiconductor memory management device that intermittently outputs refresh requests at unequal intervals for each cell, preventing resonance at a fixed frequency and reducing high-frequency radiation noise, while ensuring data retention across varying conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If refresh operation is performed at fixed intervals, then data retention is ensured, but high-frequency radiation noise is generated due to resonance
Solution Approach 1:
The patent applies dynamics by changing the refresh cycle from a fixed value to a variable value that fluctuates within a predetermined range. The request generator varies the refresh cycle dynamically, causing the refresh operation to occur at different intervals rather than a constant fixed interval. This dynamic adjustment prevents the radiation noise from resonating at a fixed high frequency, thereby reducing harmful radiation noise while maintaining data retention through consistent refresh operations.
Solution Approach 2:
The patent applies parameter changes by modifying the refresh cycle parameter from a fixed value to a variable value within a predetermined range. The request generator changes the refresh cycle parameter dynamically, causing the refresh operation to occur at different intervals. This parameter variation prevents resonance of radiation noise at a fixed frequency, reducing harmful emissions while ensuring data retention through adequate refresh operations.
2Reliability
If refresh operation cycle is reduced, then data retention is improved, but power consumption and radiation noise increase
Solution Approach 1:
The patent applies dynamics by making the refresh cycle variable rather than fixed. The request generator varies the refresh cycle within a predetermined range, allowing the system to extend refresh intervals when possible (reducing power consumption) while ensuring data retention when necessary. This dynamic adjustment optimizes the balance between data retention and power consumption.
Solution Approach 2:
The patent applies parameter changes by adjusting the refresh cycle parameter dynamically within a predetermined range. This allows the system to optimize between data retention and power consumption by varying the refresh interval rather than maintaining a fixed short cycle, thereby reducing overall power consumption while maintaining adequate data retention.
3Reliability
If refresh operation is performed frequently, then data retention is ensured, but radiation noise resonance at high frequency increases
Solution Approach 1:
The patent applies dynamics by varying the refresh cycle dynamically within a predetermined range. This prevents the refresh operation from occurring at a fixed interval, thereby preventing radiation noise from resonating at a fixed high frequency. The dynamic variation maintains data retention through sufficient refresh operations while eliminating the resonance condition that causes harmful radiation noise.
Solution Approach 2:
The patent applies parameter changes by modifying the refresh cycle parameter to vary within a predetermined range rather than remaining fixed. This parameter variation disrupts the resonance condition of radiation noise at high frequency, reducing harmful emissions while maintaining data retention through adequate refresh operations.
Data Source
AI summary
A management device for a volatile semiconductor memory includes: a request generator configured to output a refresh request requesting a refresh operation of a target cell in the volatile semiconductor memory; and a refresh operator configured to execute the refresh operation of the target cell requested in the refresh request outputted by the request generator. The request generator repeatedly outputs the refresh request for a same target cell in the volatile semiconductor memory intermittently at unequal intervals with each two successive intervals being different from each other.