Voltage Booster Isolator for Flash Memory Read Accuracy
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Solution Overview
Problem
Conventional voltage booster circuits in flash memory devices are inadequate for generating accurate boosted voltages during read mode operations, especially in high-density architectures, due to parasitic elements causing voltage inconsistencies and inefficiencies, which can lead to errors and inadequate supply of required boost voltage.
Innovation Solution
The proposed solution involves a boosting system with multiple stages coupled in series, including boosting capacitors and isolators, which prevent charge leakage between stages, allowing for efficient voltage boosting and discharging, and a regulator that adjusts the number of stages based on the supply voltage level to prevent overboosting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single stage voltage booster circuit is used in high-density architectures, then the device complexity is reduced, but the manufacturing precision and reliability of voltage boosting deteriorate due to parasitic elements causing voltage inconsistencies
Solution Approach 1:
The voltage booster circuit is divided into multiple stages (first stage, second stage, third stage) with each stage having its own capacitor and switching elements. This segmentation allows each stage to contribute to the overall voltage boosting while reducing the impact of parasitic elements in any single stage, thereby improving voltage accuracy and consistency in high-density architectures.
Solution Approach 2:
Isolators are introduced as intermediary elements between the voltage booster stages to prevent charge leakage and voltage inconsistencies from propagating between stages. These isolators act as mediators that maintain voltage integrity and improve the overall precision of the boosted voltage output.
2Device complexity
If conventional boosted voltage circuits are used, then the device simplicity is maintained, but the reliability of read mode operations deteriorates due to voltage variations with supply voltage levels, process corners, and temperature
Solution Approach 1:
The circuit employs dynamic control of switching elements (first, second, third, fourth switches) that are activated based on detected supply voltage levels. This dynamic adaptation allows the circuit to maintain reliable operation across different supply voltage conditions, process corners, and temperature variations by adjusting which stages are active.
Solution Approach 2:
A detection circuit monitors the supply voltage level and provides feedback to control the activation of voltage booster stages and isolators. This feedback mechanism ensures that the circuit adapts to changing conditions and maintains reliable read mode operations by preventing overboosting and voltage inconsistencies.
3Manufacturing precision
If multiple voltage boosting stages are always activated, then the boosted voltage accuracy is improved, but the loss of energy increases due to continuous charging and discharging of capacitors
Solution Approach 1:
The circuit dynamically activates only the necessary number of voltage boosting stages based on the detected supply voltage level. When supply voltage is sufficient, fewer stages are activated; when supply voltage is low, more stages are activated. This dynamic approach maintains voltage accuracy while minimizing energy consumption by avoiding unnecessary charging and discharging cycles.
Solution Approach 2:
Isolators are used to prevent charge leakage between stages, ensuring that charged capacitors do not discharge into adjacent stages unnecessarily. This reduces energy loss while maintaining the ability to achieve accurate boosted voltages when needed.
4Device complexity
If voltage boosting is performed without isolation between stages, then the device complexity is reduced, but the productivity deteriorates due to charge leakage and inefficiency in voltage boosting
Solution Approach 1:
Isolators are positioned between voltage boosting stages to prevent charge leakage from adjacent capacitors. These intermediary elements ensure that each capacitor maintains its charge independently, significantly improving voltage boosting efficiency and productivity without adding excessive complexity to the overall circuit structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the efficiency and accuracy of voltage boosting, ensuring reliable read mode operations by maintaining the boosted voltage within user-defined ranges and preventing overboosting, thus enhancing the performance of flash memory devices.
Implementation Method 1
The isolator can be used to prevent boosting of one capacitor from negatively affecting a charge of an adjacent capacitor
Implementation Method 2
a first capacitor in a first voltage boosting stage can be charged up to a level of a supply voltage while a second capacitor in a second voltage boosting stage is being activated to boost a charged voltage
Implementation Method 3
the pulse signal pump can be triggered to apply a pulsed signal to a second capacitor in a second voltage boosting stage to boost a charged voltage of the second capacitor
Data Source
AI summary
Systems and methods for improving efficiency of a voltage booster for read mode operations of memory cells and discharging a boosted supply voltage safely are disclosed. The system contains a plurality of boosting stages coupled in series including a plurality of boosting capacitors, a plurality of isolators. The isolator can be used to prevent boosting of one capacitor from negatively affecting a charge of the other adjacent capacitor to improve the efficiency of the voltage booster. A voltage booster circuit can accurately boost a supply voltage with a suitable number of boosting stages depending on a level of the supply voltage being provided. Since boosters contain a suitable number of boosting stages, the boosters can discharge a boosted voltage sequentially. With this sequential discharge method, memory cells can not have a hot switching problem.