Voltage Booster Circuit for Semiconductor Power Mode Control

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Solution Overview

Problem

Semiconductor devices face instability in internal operating voltages during power-up operations, and the power-saving mode can cause the boosting voltage to fall below the external power supply voltage threshold, leading to undesirable transistor activation and potential leakage currents.

Innovation Solution

A voltage booster circuit that includes a level shifter, an initial voltage booster, and a voltage boosting circuit, which generates a boosting voltage higher than the external power supply voltage during normal mode and disables charge pumping in power-saving mode to maintain voltage levels and prevent transistor activation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the voltage booster generates a boosting voltage higher than the external power supply voltage during normal mode, then the internal operating voltages stabilize properly, but during power-saving mode the boosting voltage falls below the external power supply voltage threshold causing undesirable transistor activation

Engineering Contradiction:

Improvestability of internal operating voltagesVSAvoidleakage currents from transistor activation

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The voltage booster dynamically adjusts its operation mode based on the operating mode signal. In normal mode, it performs charge pumping to generate boosting voltage higher than external power supply voltage. In power-saving mode, it disables charge pumping and transmits external power supply voltage directly, preventing the boosting voltage from falling below the threshold and causing transistor activation.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The voltage booster changes the voltage level parameter based on operating mode. During normal mode, it generates a boosting voltage level higher than the external power supply voltage. During power-saving mode, it changes to transmit the external power supply voltage level directly, ensuring the voltage remains above the transistor activation threshold.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If the voltage booster continuously generates high boosting voltage, then internal operating voltages remain stable, but power consumption increases during power-saving mode

Engineering Contradiction:

Improvestability of internal operating voltagesVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The voltage booster dynamically switches between charge pumping operation and direct voltage transmission based on the operating mode signal. This dynamic adjustment allows the system to maintain voltage stability when needed while minimizing power consumption during power-saving mode by disabling the charge pumping circuitry.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The voltage booster extracts and utilizes the external power supply voltage directly during power-saving mode without performing charge pumping. This extraction approach eliminates the need for active voltage generation, thereby reducing power consumption while still providing sufficient voltage to maintain internal operating levels.

Inventive Principle:

Principle #2Taking out (Extraction)

3Use of energy by moving object

If the voltage booster disables charge pumping during power-saving mode, then power consumption decreases, but the boosting voltage may fall below the external power supply voltage threshold

Engineering Contradiction:

Improvepower consumptionVSAvoidstability of internal operating voltages

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The voltage booster acts as an intermediary between the external power supply and the internal voltage generation circuitry. During power-saving mode, it mediates by directly transmitting the external power supply voltage to maintain the boosting voltage level, ensuring it remains above the transistor activation threshold even without active charge pumping.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Ensures stable internal operating voltages during power-up and prevents leakage currents by controlling the connection between the external power supply and the voltage boosting terminal based on power-saving mode enable signals, allowing seamless transitions between operating modes without significant power loss.

Implementation Method 1

the voltage boosting circuit performs a charge pumping operation in response to the power-up signal to generate a boosting voltage with an amplitude higher than an amplitude of the external power supply voltage

Methodology Applied

Scientific EffectCharge pumping: Pump

Data Source

PatentUS7521988B2Voltage booster for semiconductor device and semiconductor memory device using same

Publication Date: 2009.04.21 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device has a power-saving mode and a normal mode. A voltage booster within the semiconductor device responds to the normal mode and the power-saving mode by controlling various internal operating voltages of the semiconductor device using a level shifter, an internal voltage booster, and a voltage boosting circuit. The initial voltage booster is configured to transmit an external power supply voltage through an initial boosting node to a voltage boosting terminal in response to the level shifter output signal during the normal mode, and to block transmission of the external power supply voltage to the initial boosting node to decrease a voltage level of the initial boosting node during the power-saving mode.