Voltage Generating Circuit for Fast-Settling Nonvolatile Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Next-generation memory technologies face challenges in achieving high operation speed while maintaining nonvolatile characteristics, as existing solutions like DRAM are volatile and flash memory operates at lower speeds with limited random access.
Innovation Solution
A voltage generating circuit comprising a voltage supplying circuit and a current biasing circuit, which supplies power voltages and controls bias currents to optimize the output voltage and drivability, enabling rapid voltage level adjustment in nonvolatile memory apparatuses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If flash memory is used to achieve nonvolatile characteristics, then data retention without power is improved, but operation speed deteriorates
Solution Approach 1:
The voltage generating circuit is divided into two independent circuits: a voltage supplying circuit for rapid voltage generation and a current biasing circuit for precise current control. This segmentation allows each circuit to be optimized for its specific function, enabling fast voltage transitions while maintaining stable current control for nonvolatile memory operations
Solution Approach 2:
The voltage supplying circuit generates the required voltage level in advance before the memory operation begins. By pre-establishing the voltage conditions, the memory cell can immediately respond to write or read commands without waiting for voltage stabilization, thereby improving operation speed while maintaining data retention characteristics
2Speed
If voltage level is rapidly adjusted to improve operation speed, then settling time is reduced, but voltage stability deteriorates
Solution Approach 1:
The voltage supplying circuit pre-generates the target voltage level before the memory operation begins. This preliminary voltage preparation ensures that when the operation starts, the voltage is already at the stable target level, eliminating voltage transient effects and achieving both rapid response and voltage stability
Solution Approach 2:
The current biasing circuit acts as an intermediary between the voltage supplying circuit and the memory cell. It controls the bias current to flow from the output node, which stabilizes the voltage level by preventing excessive current draw that could cause voltage fluctuations during rapid transitions
3Ease of operation
If bias current is increased to improve drivability, then current control precision deteriorates
Solution Approach 1:
The circuit is segmented into voltage supplying and current biasing functions. The current biasing circuit specifically handles current control with high precision through dedicated bias current sources, while the voltage supplying circuit provides sufficient voltage headroom for strong drivability. This separation allows both high drivability and precise current control to coexist
Data Source
AI summary
A voltage generating circuit includes a voltage supplying circuit and a current biasing circuit. The voltage supplying circuit is configured to supply a first power voltage to an output node based on a first enable signal. The current biasing circuit is configured to control a bias current to flow from the output node based on a second enable signal. The second enable signal is enabled after the first enable signal is enabled.


