Voltage Control Circuit for Flash Storage Boost Speed
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Solution Overview
Problem
Conventional Flash storage device circuits face increased power consumption and performance degradation due to the need for high operation voltages, which can damage the device and are unstable due to threshold voltage variations during operations like erase and programming.
Innovation Solution
A circuit and method that control the boost speed of operation voltage by dividing the voltage boost process into multiple steps using a voltage division unit, comparison unit, and control unit, ensuring the boosted voltage is maintained at target levels, reducing power consumption and performance impact from threshold voltage changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a charge pump circuit is used to generate high operation voltages from low power supply voltage, then the storage device can perform write and erase operations, but the power consumption is increased and the circuit performance requirements are increased
Solution Approach 1:
The patent segments the voltage boost process into multiple stages by introducing a voltage division unit that divides the boosted voltage into multiple levels. The charge pump performs voltage boosting in steps rather than directly generating the full high voltage, thereby reducing the power consumption and performance requirements of the charge pump circuit while still achieving the required operation voltages for write and erase operations
2Reliability
If the operation voltage is established and applied to the storage device too fast, then the storage device may be damaged and reliability is reduced, but controlling the boost speed increases the complexity of the circuit
Solution Approach 1:
The patent divides the voltage establishment process into multiple controlled stages using the voltage division unit. Each stage applies a controlled portion of the boosted voltage to the storage device, preventing damage from excessive voltage application while maintaining reliability. The segmentation approach controls boost speed without requiring complex external control circuits
Solution Approach 2:
The voltage division unit acts as an intermediary between the charge pump and the storage device. It mediates the voltage transfer by dividing the high boosted voltage into multiple lower levels that are applied sequentially to the storage device, thereby protecting the device from voltage damage while maintaining circuit simplicity
3Power
If the threshold voltage of transistors changes during working process, then the operation voltage may deviate from target value and device performance is affected
Solution Approach 1:
The patent implements a feedback mechanism where the divided voltage is continuously monitored and compared with a reference voltage. Based on this comparison, the control unit adjusts the charge pump operation to maintain the operation voltage at the target value, compensating for threshold voltage changes in the transistors and ensuring stable device performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively controls the boost speed of operation voltage, maintaining stability and reducing power consumption and performance degradation caused by threshold voltage variations, ensuring the storage device operates within safe and efficient parameters.
Implementation Method 1
a charge pump circuit is widely used in the storage device. The charge pump circuit is used to obtain higher operation voltages for the storage device from the lower power supply voltage
Implementation Method 2
a capacitor, where a first terminal of the capacitor is connected with ground; when the switch K is closed, the NMOS transistor N is turned on, and the capacitor C is charged
Data Source
AI summary
A circuit and a method for controlling operation voltage, and a storage device are provided. The circuit includes: a voltage boost unit adapted for: if receiving a first signal, performing a voltage boost process; and if receiving a second signal, stopping the voltage boost process; a voltage division unit including a plurality of different voltage division coefficients, adapted for performing a voltage division process; a comparison unit adapted for: comparing the divided voltage with a reference voltage; if the divided voltage is low, outputting the first signal; and if not, outputting the second signal; a control unit adapted for performing a descending switching operation on the voltage division coefficients; and an output unit. The establishing speed of the operation voltage is effectively controlled, and an effect on device power consumption and performance caused by the threshold voltage and variations of the threshold voltage in the working process is eliminated.