Selective Material Layer Deposition Using Voltage-Controlled Base Patterns
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Solution Overview
Problem
Existing methods for selectively depositing material layers face challenges in achieving precise control over deposition rates and patterns, particularly in complex semiconductor devices, leading to inefficiencies and increased process time.
Innovation Solution
A method involving the application of different voltages to a base pattern on a substrate to control the deposition rates of precursors, allowing for the formation of material layers with varying thicknesses and the subsequent etching to create targeted patterns, enabling selective deposition and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective deposition methods are used to deposit material layers in specific areas, then material layer formation is achieved, but the deposition rate control is insufficient and process time increases
Solution Approach 1:
The patent applies local quality by creating different electric field strengths in different spatial regions during deposition. By controlling the electric field distribution, the deposition rate is locally optimized - faster in desired areas and slower or suppressed in areas where material accumulation should be avoided. This resolves the contradiction by enabling precise deposition rate control without extending process time, as each region receives the appropriate deposition conditions simultaneously rather than through sequential processing steps.
2Manufacturing precision
If repeated process cycles are used to achieve precise pattern formation, then manufacturing precision improves, but growth rate slows down
Solution Approach 1:
The patent implements continuity of useful action by maintaining continuous material deposition under controlled electric field conditions throughout the process. Instead of using repeated discrete process cycles with intermediate steps, the electric field-controlled deposition proceeds continuously with precise spatial and temporal control. This eliminates idle time between cycles while maintaining pattern formation precision, thereby resolving the contradiction between manufacturing precision and productivity.
Solution Approach 2:
The patent applies dynamics by making the electric field parameters adjustable and responsive during the deposition process. The electric field strength and distribution can be dynamically modified to optimize deposition rates at different stages and locations. This dynamic control enables precise pattern formation to be achieved in a single continuous process rather than through multiple static cycles, resolving the contradiction between precision and growth rate.
3Ease of manufacture
If selective deposition is performed without voltage control, then process simplicity is maintained, but deposition rate uniformity and pattern accuracy deteriorate
Solution Approach 1:
The patent applies parameter changes by modifying the electric field parameters (voltage, field distribution) to control deposition characteristics. By adjusting these parameters, the deposition rate and material distribution are precisely controlled to achieve accurate pattern formation. This resolves the contradiction by showing that while voltage control adds a parameter to the process, it enables precise pattern accuracy that would otherwise require much more complex multi-step processes, thus improving ease of manufacture in practice.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective formation of material layers with varying thicknesses and precise pattern creation, enhancing process efficiency and reducing process time by controlling deposition rates and pattern formation.
Implementation Method 1
providing a first precursor onto the substrate on which the base pattern is formed while a first voltage is applied to the base pattern; and forming a material layer formed by reacting the first precursor with the second precursor on the substrate on which the base pattern is famed, by providing a second precursor onto the substrate to which the first precursor is provided while a second voltage is applied to the base pattern
Implementation Method 2
forming a target pattern on the base pattern by providing an etching source on the substrate on which the material layer is formed, wherein the etching source etches the material layer deposited on the base pattern and the material layer deposited on the substrate exposed between the base patterns
Data Source
AI summary
A material layer manufacturing method is provided. The material layer manufacturing method may comprise the steps of: preparing a substrate having a base pattern formed thereon; providing a first precursor on the substrate having the base pattern formed thereon, in a state where a first voltage is applied to the base pattern; and providing a second precursor on the substrate having the first precursor provided thereon, in a state where a second voltage is applied to the base pattern, to form, on the substrate having the base pattern formed thereon, a material layer resulting from the reaction of the first precursor with the second precursor.