Voltage Conversion Circuit for Memory Standby Mode Voltage Matching
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Solution Overview
Problem
Semiconductor memory apparatuses face operational reliability issues due to differences in internal voltages generated for active and standby modes, leading to potential malfunctions when transitioning between these modes, as the levels of reference voltages used in these modes are not consistently matched.
Innovation Solution
A voltage conversion circuit that includes a first reference voltage generation block, a second reference voltage generation block, a trim code generation block, and an internal voltage generation block, which work together to ensure that the levels of the first and second reference voltages are made substantially similar, allowing the semiconductor memory apparatus to select the appropriate voltage based on the operation mode and generate an internal voltage from an external voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If different reference voltages are used in active mode and standby mode to reduce standby current, then power consumption is reduced, but operational reliability deteriorates due to voltage level mismatches causing potential malfunctions during mode transitions
Solution Approach 1:
The patent changes the voltage level parameter of the second reference voltage dynamically based on the first reference voltage level. A trim code generation block compares the first reference voltage (used in active mode) with the second reference voltage (used in standby mode) and generates a trim code to adjust the second reference voltage level, ensuring both voltages operate at substantially the same level to prevent operational malfunctions
Solution Approach 2:
The patent implements a feedback mechanism where the trim code generation block continuously monitors and compares the levels of the first and second reference voltages. Based on this comparison, the system generates appropriate trim codes to adjust the second reference voltage, creating a closed-loop control system that maintains voltage level consistency across different operational modes
2Reliability
If the levels of first and second reference voltages are made substantially similar through trimming, then operational reliability is improved, but device complexity increases due to additional trim code generation and voltage adjustment circuits
Solution Approach 1:
The patent segments the voltage reference system into distinct functional blocks: a first reference voltage generation block for active mode, a second reference voltage generation block for standby mode, and a trim code generation block that compares and adjusts the second reference voltage. This segmentation allows each block to perform its specific function independently while maintaining overall system reliability
Solution Approach 2:
The patent introduces a trim code generation block as an intermediary component between the two reference voltage generation blocks. This intermediary compares the voltage levels and generates appropriate adjustment codes, acting as a mediator that enables voltage level matching without requiring complete system redesign or complex direct coupling between the voltage sources
Data Source
AI summary
A voltage conversion circuit may include a first reference voltage generation block configured to be provided with an external voltage, and generate a first reference voltage; a second reference voltage generation block configured to be provided with the external voltage and generate a second reference voltage according to a standby trim code; a trim code generation block configured to generate the standby trim code according to levels of the first reference voltage and the second reference voltage; and an internal voltage generation block configured to select the first reference voltage or the second reference voltage as a determined reference voltage according to an operation mode of a semiconductor memory apparatus, and to generate an internal voltage from the external voltage.