Voltage Divider Bulk Biasing for Low-Leakage Multi-Voltage ICs
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Solution Overview
Problem
Integrated circuits require multiple supply voltages, but existing voltage generators struggle to efficiently generate and stabilize these voltages, leading to issues with reverse leakage currents and voltage division accuracy.
Innovation Solution
The electronic device employs a voltage divider with parallel-connected transistors and resistors, where transistors are turned on or off to adjust resistance, generating different voltages for each bulk, thereby minimizing reverse leakage currents and maintaining accurate voltage division.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a voltage divider is used to generate multiple supply voltages, then voltage generation capability is improved, but reverse leakage currents increase due to high voltage across transistor bulks
Solution Approach 1:
The voltage divider is segmented into multiple independent voltage division branches, each with its own transistor and resistor configuration. This segmentation allows each branch to operate independently with optimized bulk voltages, reducing reverse leakage currents while maintaining the ability to generate multiple supply voltages.
Solution Approach 2:
Different bulk voltages are applied to different transistor bulks based on their specific requirements in the voltage division chain. The first transistor receives a first bulk voltage and the second transistor receives a second bulk voltage, creating local quality variations that minimize reverse leakage currents in each specific location.
2Adaptability or versatility
If transistors are used to adjust resistance in the voltage divider, then voltage adjustment flexibility is improved, but voltage division accuracy deteriorates due to leakage currents
Solution Approach 1:
The bulk voltages of the transistors are changed as a control parameter to optimize their operation. By applying specific first and second bulk voltages to the first and second transistors respectively, the transistors operate in optimal regions that minimize leakage currents while maintaining adjustable resistance characteristics for accurate voltage division.
3Adaptability or versatility
If high voltage is applied across source/drain and bulk of transistors, then voltage generation range is improved, but junction leakage current increases
Solution Approach 1:
Different bulk voltage levels are applied locally to different transistors based on their position and voltage requirements in the divider chain. This local quality approach allows the system to achieve a wide voltage generation range while keeping the voltage across each individual source/drain-bulk junction at moderate levels, minimizing leakage currents.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the generation of multiple stable voltages with low reverse leakage currents, ensuring high equivalent resistance and precise voltage division, thus addressing the challenges faced by existing voltage generators.
Implementation Method 1
the first resistor and the second resistor are configured to divide a supply voltage at a terminal of the first resistor
Implementation Method 2
determining a first resistance of a first variable resistor circuit by turning a first transistor on or off
Data Source
AI summary
An electronic device and a method of controlling an electronic device are provided. The electronic device includes a first transistor having a first resistor, second resistor, first transistor, and second transistor. The second resistor is connected to the first resistor. The first transistor is connected to the first resistor in parallel and has a first bulk. The second transistor is connected to the second resistor in parallel and has a second bulk. The first bulk of the first transistor receives a first voltage and the first bulk of the second transistor receives a second voltage. The first voltage and the second voltage are different.