Voltage Generating Circuit for 3D Memory Reliability
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Solution Overview
Problem
As memory devices approach their physical scaling limits, there is a need for improved reliability in voltage management for program and erase operations in three-dimensional (3D) memory structures to ensure efficient and accurate data storage.
Innovation Solution
A memory device incorporating a voltage generating circuit with multiple voltage sources that selectively apply precharge and erase voltages to source lines, well, and word lines during program and erase operations, enhancing control over memory cell operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single voltage source is used for program and erase operations, then device complexity is reduced, but reliability of voltage management deteriorates
Solution Approach 1:
The voltage generating circuit is segmented into multiple independent voltage sources (first voltage source for well voltage, second voltage source for source line voltage, third voltage source for bit line voltage). Each voltage source independently manages specific voltage requirements for program and erase operations, improving voltage management reliability while maintaining controlled complexity through functional specialization.
2Reliability
If multiple voltage sources are used for program and erase operations, then reliability of voltage management is improved, but device complexity increases
Solution Approach 1:
The voltage generating circuit is segmented into multiple independent voltage sources (first voltage source for well voltage, second voltage source for source line voltage, third voltage source for bit line voltage). Each voltage source independently manages specific voltage requirements for program and erase operations, improving voltage management reliability while maintaining controlled complexity through functional specialization.
Solution Approach 2:
Each voltage source is designed to provide multiple voltage levels (e.g., the first voltage source provides both first program voltage and first erase voltage to the well). This multi-functionality allows a single voltage source to handle different operational requirements, improving reliability without proportionally increasing overall circuit complexity.
3Manufacturing precision
If precharge voltage is applied to source line during program operation, then programming accuracy is improved, but channel voltage leakage increases
Solution Approach 1:
The patent applies different voltage characteristics to different regions: precharge voltage is applied locally to the source line to ensure accurate programming, while the channel region is protected through selective voltage application timing and isolation mechanisms. This localized voltage management prevents harmful voltage leakage in the channel while maintaining programming accuracy at the source line.
Solution Approach 2:
Precharge voltage is applied to the source line in advance before the actual programming operation begins. This preliminary action ensures that the source line is properly prepared for accurate programming while allowing subsequent control mechanisms to prevent voltage leakage into the channel during the programming process.
Data Source
AI summary
Provided herein may be a memory device including a voltage generating circuit. The memory device may include a memory block including a channel layer formed between junctions included in a well, and a source select line, word lines, and drain select lines that are sequentially stacked on the well while enclosing the channel layer, a first voltage source configured to generate a first operating voltage to be applied to the well during a program operation or an erase operation, and a second voltage source configured to generate a second operating voltage to be applied to source lines that are coupled to the junctions during the program operation or the erase operation.